RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs

Sheng Chun Wang; Pin Su; Kun Ming Chen; Chien Ting Lin; Victor Liang; Guo Wei Huang

doi:10.1109/VTSA.2006.251102

RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs

Sheng Chun Wang^*, Pin Su, Kun Ming Chen, Chien Ting Lin, Victor Liang, Guo Wei Huang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
Pages	139-140
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2006.251102
State	Published - 1 Dec 2006
Event	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, Taiwan Duration: 24 Apr 2006 → 26 Apr 2006

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
Country/Territory	Taiwan
City	Hsinchu
Period	24/04/06 → 26/04/06

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10.1109/VTSA.2006.251102

Cite this

Wang, S. C., Su, P., Chen, K. M., Lin, C. T., Liang, V., & Huang, G. W. (2006). RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs. In 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers (pp. 139-140). Article 4016638 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2006.251102

Wang, Sheng Chun ; Su, Pin ; Chen, Kun Ming et al. / RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs. 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers. 2006. pp. 139-140 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{57cc452a76384cbaac5d6c9cce517454,

title = "RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs",

author = "Wang, {Sheng Chun} and Pin Su and Chen, {Kun Ming} and Lin, {Chien Ting} and Victor Liang and Huang, {Guo Wei}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/VTSA.2006.251102",

language = "English",

isbn = "142440181X",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "139--140",

booktitle = "2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers",

note = "2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA ; Conference date: 24-04-2006 Through 26-04-2006",

}

Wang, SC, Su, P, Chen, KM, Lin, CT, Liang, V & Huang, GW 2006, RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs. in 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers., 4016638, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 139-140, 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA, Hsinchu, Taiwan, 24/04/06. https://doi.org/10.1109/VTSA.2006.251102

RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs. / Wang, Sheng Chun; Su, Pin; Chen, Kun Ming et al.
2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers. 2006. p. 139-140 4016638 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs

AU - Wang, Sheng Chun

AU - Su, Pin

AU - Chen, Kun Ming

AU - Lin, Chien Ting

AU - Liang, Victor

AU - Huang, Guo Wei

PY - 2006/12/1

Y1 - 2006/12/1

UR - http://www.scopus.com/inward/record.url?scp=34250331892&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2006.251102

DO - 10.1109/VTSA.2006.251102

M3 - Conference contribution

AN - SCOPUS:34250331892

SN - 142440181X

SN - 9781424401819

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 139

EP - 140

BT - 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers

T2 - 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA

Y2 - 24 April 2006 through 26 April 2006

ER -

Wang SC, Su P, Chen KM, Lin CT, Liang V, Huang GW. RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs. In 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers. 2006. p. 139-140. 4016638. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2006.251102

RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs

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