RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

Shi Jin Ding; Hang Hu; Chunxiang Zhu; Sun Jung Kim; Xiongfei Yu; Ming Fu Li; Byung Jin Cho; Daniel S.H. Chan; M. B. Yu; Subhash C. Rustagi; Albert Chin; Dim Lee Kwong

doi:10.1109/TED.2004.827367

RF, DC, and reliability characteristics of ALD HfO₂-Al₂O₃ laminate MIM capacitors for Si RF IC applications

Shi Jin Ding^*, Hang Hu, Chunxiang Zhu, Sun Jung Kim, Xiongfei Yu, Ming Fu Li, Byung Jin Cho, Daniel S.H. Chan, M. B. Yu, Subhash C. Rustagi, Albert Chin, Dim Lee Kwong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO₂-Al₂O₃ laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF/μm²) up to 20 GHz, low leakage current of 4.9 × 10^-8 A/cm² at 2 V and 125°C, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (α) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.

Original language	English
Pages (from-to)	886-894
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	6
DOIs	https://doi.org/10.1109/TED.2004.827367
State	Published - Jun 2004

Keywords

Atomic layer-deposit (ALD)
HfO-AlO laminate
Metal-insulator-metal (MIM) capacitor
Radio frequency (RF)
Reliability

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10.1109/TED.2004.827367

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@article{442f2afeb522484cb256f7f19fc47bf3,

title = "RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications",

abstract = "High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO2-Al2O3 laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF/μm2) up to 20 GHz, low leakage current of 4.9 × 10-8 A/cm2 at 2 V and 125°C, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (α) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.",

keywords = "Atomic layer-deposit (ALD), HfO-AlO laminate, Metal-insulator-metal (MIM) capacitor, Radio frequency (RF), Reliability",

author = "Ding, {Shi Jin} and Hang Hu and Chunxiang Zhu and Kim, {Sun Jung} and Xiongfei Yu and Li, {Ming Fu} and Cho, {Byung Jin} and Chan, {Daniel S.H.} and Yu, {M. B.} and Rustagi, {Subhash C.} and Albert Chin and Kwong, {Dim Lee}",

year = "2004",

month = jun,

doi = "10.1109/TED.2004.827367",

language = "English",

volume = "51",

pages = "886--894",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

AU - Ding, Shi Jin

AU - Hu, Hang

AU - Zhu, Chunxiang

AU - Kim, Sun Jung

AU - Yu, Xiongfei

AU - Li, Ming Fu

AU - Cho, Byung Jin

AU - Chan, Daniel S.H.

AU - Yu, M. B.

AU - Rustagi, Subhash C.

AU - Chin, Albert

AU - Kwong, Dim Lee

PY - 2004/6

Y1 - 2004/6

N2 - High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO2-Al2O3 laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF/μm2) up to 20 GHz, low leakage current of 4.9 × 10-8 A/cm2 at 2 V and 125°C, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (α) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.

AB - High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO2-Al2O3 laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF/μm2) up to 20 GHz, low leakage current of 4.9 × 10-8 A/cm2 at 2 V and 125°C, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (α) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.

KW - Atomic layer-deposit (ALD)

KW - HfO-AlO laminate

KW - Metal-insulator-metal (MIM) capacitor

KW - Radio frequency (RF)

KW - Reliability

UR - http://www.scopus.com/inward/record.url?scp=2942661891&partnerID=8YFLogxK

U2 - 10.1109/TED.2004.827367

DO - 10.1109/TED.2004.827367

M3 - Article

AN - SCOPUS:2942661891

SN - 0018-9383

VL - 51

SP - 886

EP - 894

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

RF, DC, and reliability characteristics of ALD HfO₂-Al₂O₃ laminate MIM capacitors for Si RF IC applications

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Keywords

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