Review of Silicon Carbide Processing for Power MOSFET

Catherine Langpoklakpam, An Chen Liu, Kuo Hsiung Chu, Lung Hsing Hsu, Wen Chung Lee, Shih Chen Chen, Chia Wei Sun, Min Hsiung Shih, Kung Yen Lee, Hao Chung Kuo*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

46 Scopus citations

Abstract

Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.

Original languageEnglish
Article number245
JournalCrystals
Volume12
Issue number2
DOIs
StatePublished - Feb 2022

Keywords

  • Breakdown voltage
  • On-resistance
  • Power devices
  • SiC MOSFETs
  • Silicon (Si)
  • Silicon carbide (SiC)

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