Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2

Wun Cheng Luo; Tuo-Hung Hou; Kuan Liang Lin; Yao Jen Lee; Tan Fu Lei

doi:10.1016/j.sse.2013.08.005

Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO₂

Wun Cheng Luo, Tuo-Hung Hou^*, Kuan Liang Lin, Yao Jen Lee, Tan Fu Lei

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

In contrast to the irreversible transition of resistive switching induced by oxygen-vacancy filaments (VF) and metal filaments (MF) reported in the literature, this study reports coexistence and completely reversible transition of VF- and MF-induced resistive switching in a Ni/HfO₂/SiO _x/p⁺-Si device with three distinct and stable resistance states. In a dual filament model proposed, VF and MF may coexist at the same percolation path, and the formation and rupture proceed in a two-step fashion by choosing appropriate SET/RESET conditions. Exploiting the dependence of different filament compositions on resistive switching may enable new design space for future multi-level-cell resistive-switching memory.

Original language	English
Pages (from-to)	167-170
Number of pages	4
Journal	Solid-State Electronics
Volume	89
DOIs	https://doi.org/10.1016/j.sse.2013.08.005
State	Published - Nov 2013

Keywords

Filament
Multi-level-cell
RRAM
Resistive switching

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10.1016/j.sse.2013.08.005

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title = "Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2",

abstract = "In contrast to the irreversible transition of resistive switching induced by oxygen-vacancy filaments (VF) and metal filaments (MF) reported in the literature, this study reports coexistence and completely reversible transition of VF- and MF-induced resistive switching in a Ni/HfO2/SiO x/p+-Si device with three distinct and stable resistance states. In a dual filament model proposed, VF and MF may coexist at the same percolation path, and the formation and rupture proceed in a two-step fashion by choosing appropriate SET/RESET conditions. Exploiting the dependence of different filament compositions on resistive switching may enable new design space for future multi-level-cell resistive-switching memory.",

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T1 - Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2

AU - Luo, Wun Cheng

AU - Hou, Tuo-Hung

AU - Lin, Kuan Liang

AU - Lee, Yao Jen

AU - Lei, Tan Fu

PY - 2013/11

Y1 - 2013/11

N2 - In contrast to the irreversible transition of resistive switching induced by oxygen-vacancy filaments (VF) and metal filaments (MF) reported in the literature, this study reports coexistence and completely reversible transition of VF- and MF-induced resistive switching in a Ni/HfO2/SiO x/p+-Si device with three distinct and stable resistance states. In a dual filament model proposed, VF and MF may coexist at the same percolation path, and the formation and rupture proceed in a two-step fashion by choosing appropriate SET/RESET conditions. Exploiting the dependence of different filament compositions on resistive switching may enable new design space for future multi-level-cell resistive-switching memory.

AB - In contrast to the irreversible transition of resistive switching induced by oxygen-vacancy filaments (VF) and metal filaments (MF) reported in the literature, this study reports coexistence and completely reversible transition of VF- and MF-induced resistive switching in a Ni/HfO2/SiO x/p+-Si device with three distinct and stable resistance states. In a dual filament model proposed, VF and MF may coexist at the same percolation path, and the formation and rupture proceed in a two-step fashion by choosing appropriate SET/RESET conditions. Exploiting the dependence of different filament compositions on resistive switching may enable new design space for future multi-level-cell resistive-switching memory.

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KW - Multi-level-cell

KW - RRAM

KW - Resistive switching

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DO - 10.1016/j.sse.2013.08.005

M3 - Article

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SN - 0038-1101

VL - 89

SP - 167

EP - 170

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO₂

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Keywords

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