Reusable Detector of ZnO-based Transistor in Floating Gate Structure for High Sensitivity pH Sensor

Yen Shuo Chen; Hsin Chiang You; Ching Chang Lin; Fu Hsiang Ko

doi:10.1109/NMDC57951.2023.10344188

Reusable Detector of ZnO-based Transistor in Floating Gate Structure for High Sensitivity pH Sensor

Yen Shuo Chen^*, Hsin Chiang You, Ching Chang Lin, Fu Hsiang Ko^*

^*Corresponding author for this work

Undergraduate Honors Program of Nano Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we propose a simple, low-temperature sol-gel preparation method for depositing thin-film transistors with zinc oxide (ZnO) semiconductor channel layer under oxygen treatment. A plasma method at a low power of 18 W is used to surface treatments. A novel floating-gate (FG) thin-film transistor structure is developed for detecting acid and alkaline standard buffer solutions. The hydrogen ions and hydroxide ions in the buffer are varied, resulting in a slight bias, and this indirectly affected the dielectric layer of the sensor. The device displays excellent pH sensitivity with an average voltage sensitivity of 562.5 mv/pH at pH values from 2 to 10, with optimal pH stability. This results in changes in the output of the electrical curve, which enables pH detection, which can be considered an excellent pH sensor.

Original language	English
Title of host publication	2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	664-667
Number of pages	4
ISBN (Electronic)	9798350335460
DOIs	https://doi.org/10.1109/NMDC57951.2023.10344188
State	Published - 2023
Event	18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 - Paestum, Italy Duration: 22 Oct 2023 → 25 Oct 2023

Publication series

Name	2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

Conference

Conference	18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023
Country/Territory	Italy
City	Paestum
Period	22/10/23 → 25/10/23

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10.1109/NMDC57951.2023.10344188

Cite this

Chen, Y. S., You, H. C., Lin, C. C., & Ko, F. H. (2023). Reusable Detector of ZnO-based Transistor in Floating Gate Structure for High Sensitivity pH Sensor. In 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 (pp. 664-667). (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NMDC57951.2023.10344188

Chen, Yen Shuo ; You, Hsin Chiang ; Lin, Ching Chang et al. / Reusable Detector of ZnO-based Transistor in Floating Gate Structure for High Sensitivity pH Sensor. 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 664-667 (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023).

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title = "Reusable Detector of ZnO-based Transistor in Floating Gate Structure for High Sensitivity pH Sensor",

abstract = "In this paper, we propose a simple, low-temperature sol-gel preparation method for depositing thin-film transistors with zinc oxide (ZnO) semiconductor channel layer under oxygen treatment. A plasma method at a low power of 18 W is used to surface treatments. A novel floating-gate (FG) thin-film transistor structure is developed for detecting acid and alkaline standard buffer solutions. The hydrogen ions and hydroxide ions in the buffer are varied, resulting in a slight bias, and this indirectly affected the dielectric layer of the sensor. The device displays excellent pH sensitivity with an average voltage sensitivity of 562.5 mv/pH at pH values from 2 to 10, with optimal pH stability. This results in changes in the output of the electrical curve, which enables pH detection, which can be considered an excellent pH sensor.",

author = "Chen, {Yen Shuo} and You, {Hsin Chiang} and Lin, {Ching Chang} and Ko, {Fu Hsiang}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 ; Conference date: 22-10-2023 Through 25-10-2023",

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doi = "10.1109/NMDC57951.2023.10344188",

language = "English",

series = "2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Chen, YS, You, HC, Lin, CC & Ko, FH 2023, Reusable Detector of ZnO-based Transistor in Floating Gate Structure for High Sensitivity pH Sensor. in 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023, Institute of Electrical and Electronics Engineers Inc., pp. 664-667, 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023, Paestum, Italy, 22/10/23. https://doi.org/10.1109/NMDC57951.2023.10344188

Reusable Detector of ZnO-based Transistor in Floating Gate Structure for High Sensitivity pH Sensor. / Chen, Yen Shuo; You, Hsin Chiang; Lin, Ching Chang et al.
2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 664-667 (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Reusable Detector of ZnO-based Transistor in Floating Gate Structure for High Sensitivity pH Sensor

AU - Chen, Yen Shuo

AU - You, Hsin Chiang

AU - Lin, Ching Chang

AU - Ko, Fu Hsiang

PY - 2023

Y1 - 2023

N2 - In this paper, we propose a simple, low-temperature sol-gel preparation method for depositing thin-film transistors with zinc oxide (ZnO) semiconductor channel layer under oxygen treatment. A plasma method at a low power of 18 W is used to surface treatments. A novel floating-gate (FG) thin-film transistor structure is developed for detecting acid and alkaline standard buffer solutions. The hydrogen ions and hydroxide ions in the buffer are varied, resulting in a slight bias, and this indirectly affected the dielectric layer of the sensor. The device displays excellent pH sensitivity with an average voltage sensitivity of 562.5 mv/pH at pH values from 2 to 10, with optimal pH stability. This results in changes in the output of the electrical curve, which enables pH detection, which can be considered an excellent pH sensor.

AB - In this paper, we propose a simple, low-temperature sol-gel preparation method for depositing thin-film transistors with zinc oxide (ZnO) semiconductor channel layer under oxygen treatment. A plasma method at a low power of 18 W is used to surface treatments. A novel floating-gate (FG) thin-film transistor structure is developed for detecting acid and alkaline standard buffer solutions. The hydrogen ions and hydroxide ions in the buffer are varied, resulting in a slight bias, and this indirectly affected the dielectric layer of the sensor. The device displays excellent pH sensitivity with an average voltage sensitivity of 562.5 mv/pH at pH values from 2 to 10, with optimal pH stability. This results in changes in the output of the electrical curve, which enables pH detection, which can be considered an excellent pH sensor.

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U2 - 10.1109/NMDC57951.2023.10344188

DO - 10.1109/NMDC57951.2023.10344188

M3 - Conference contribution

AN - SCOPUS:85182028975

T3 - 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

SP - 664

EP - 667

BT - 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

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Chen YS, You HC, Lin CC, Ko FH. Reusable Detector of ZnO-based Transistor in Floating Gate Structure for High Sensitivity pH Sensor. In 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 664-667. (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023). doi: 10.1109/NMDC57951.2023.10344188

Reusable Detector of ZnO-based Transistor in Floating Gate Structure for High Sensitivity pH Sensor

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