Retraction to Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

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@article{b78e78417c874a09a3ad6a61f5355d80,

title = "Retraction to Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface",

author = "Amit Prakash and Siddheswar Maikap and Chiu, \{Hsien Chin\} and Tien, \{Ta Chang\} and Lai, \{Chao Sung\}",

year = "2013",

doi = "10.1186/1556-276X-8-419",

language = "English",

volume = "8",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Retraction to Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

AU - Prakash, Amit

AU - Maikap, Siddheswar

AU - Chiu, Hsien Chin

AU - Tien, Ta Chang

AU - Lai, Chao Sung

PY - 2013

Y1 - 2013

UR - https://www.scopus.com/pages/publications/84887264422

U2 - 10.1186/1556-276X-8-419

DO - 10.1186/1556-276X-8-419

M3 - Comment/debate

AN - SCOPUS:84887264422

SN - 1931-7573

VL - 8

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 419

ER -