RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS

Jian Hsing Lee; Ching Ho Li; Karuna Nidhi; Chih Hsuan Lin; Chieh Yao Chuang; Wei Hsin Lin; Kei Chieh Hsu; Yeh Ning Jou; Shao Chang Huang; Chih Cherng Liao; Ke Horng Chen

doi:10.1109/IPFA58228.2023.10249061

RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS

Jian Hsing Lee^*, Ching Ho Li, Karuna Nidhi, Chih Hsuan Lin, Chieh Yao Chuang, Wei Hsin Lin, Kei Chieh Hsu, Yeh Ning Jou, Shao Chang Huang, Chih Cherng Liao, Ke Horng Chen

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

The nonuniform current distribution of high-voltage laterally-diffused metal-oxide semiconductor (HV LDMOS) is an inevitable phenomenon if the process does not consider the shadow effect of implant. It is because some implants to fabricate transistor are not the self-aligned processes and usually tilted at an angle. From T-CAD simulation, it reveals that the width and doping profile of reduced surface (RESURF) regions vary with the location of HV LDMOS, resulting in the current crowding at the shortest RESURF region due to the base push-out induced snapback.

Original language	English
Title of host publication	2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350301649
DOIs	https://doi.org/10.1109/IPFA58228.2023.10249061
State	Published - 2023
Event	2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 - Pulau Pinang, Malaysia Duration: 24 Jul 2023 → 27 Jul 2023

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2023-July

Conference

Conference	2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023
Country/Territory	Malaysia
City	Pulau Pinang
Period	24/07/23 → 27/07/23

Keywords

Electrostatic-Discharge (ESD)
Reduced Surface Field (RESURF)
Transmission-Line Pulse (TLP)

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10.1109/IPFA58228.2023.10249061

Cite this

Lee, J. H., Li, C. H., Nidhi, K., Lin, C. H., Chuang, C. Y., Lin, W. H., Hsu, K. C., Jou, Y. N., Huang, S. C., Liao, C. C., & Chen, K. H. (2023). RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS. In 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2023-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA58228.2023.10249061

Lee, Jian Hsing ; Li, Ching Ho ; Nidhi, Karuna et al. / RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS. 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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title = "RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS",

abstract = "The nonuniform current distribution of high-voltage laterally-diffused metal-oxide semiconductor (HV LDMOS) is an inevitable phenomenon if the process does not consider the shadow effect of implant. It is because some implants to fabricate transistor are not the self-aligned processes and usually tilted at an angle. From T-CAD simulation, it reveals that the width and doping profile of reduced surface (RESURF) regions vary with the location of HV LDMOS, resulting in the current crowding at the shortest RESURF region due to the base push-out induced snapback.",

keywords = "Electrostatic-Discharge (ESD), Reduced Surface Field (RESURF), Transmission-Line Pulse (TLP)",

author = "Lee, {Jian Hsing} and Li, {Ching Ho} and Karuna Nidhi and Lin, {Chih Hsuan} and Chuang, {Chieh Yao} and Lin, {Wei Hsin} and Hsu, {Kei Chieh} and Jou, {Yeh Ning} and Huang, {Shao Chang} and Liao, {Chih Cherng} and Chen, {Ke Horng}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 ; Conference date: 24-07-2023 Through 27-07-2023",

year = "2023",

doi = "10.1109/IPFA58228.2023.10249061",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023",

address = "美國",

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Lee, JH, Li, CH, Nidhi, K, Lin, CH, Chuang, CY, Lin, WH, Hsu, KC, Jou, YN, Huang, SC, Liao, CC & Chen, KH 2023, RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS. in 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2023-July, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023, Pulau Pinang, Malaysia, 24/07/23. https://doi.org/10.1109/IPFA58228.2023.10249061

RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS. / Lee, Jian Hsing; Li, Ching Ho; Nidhi, Karuna et al.
2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2023-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS

AU - Lee, Jian Hsing

AU - Li, Ching Ho

AU - Nidhi, Karuna

AU - Lin, Chih Hsuan

AU - Chuang, Chieh Yao

AU - Lin, Wei Hsin

AU - Hsu, Kei Chieh

AU - Jou, Yeh Ning

AU - Huang, Shao Chang

AU - Liao, Chih Cherng

AU - Chen, Ke Horng

PY - 2023

Y1 - 2023

N2 - The nonuniform current distribution of high-voltage laterally-diffused metal-oxide semiconductor (HV LDMOS) is an inevitable phenomenon if the process does not consider the shadow effect of implant. It is because some implants to fabricate transistor are not the self-aligned processes and usually tilted at an angle. From T-CAD simulation, it reveals that the width and doping profile of reduced surface (RESURF) regions vary with the location of HV LDMOS, resulting in the current crowding at the shortest RESURF region due to the base push-out induced snapback.

AB - The nonuniform current distribution of high-voltage laterally-diffused metal-oxide semiconductor (HV LDMOS) is an inevitable phenomenon if the process does not consider the shadow effect of implant. It is because some implants to fabricate transistor are not the self-aligned processes and usually tilted at an angle. From T-CAD simulation, it reveals that the width and doping profile of reduced surface (RESURF) regions vary with the location of HV LDMOS, resulting in the current crowding at the shortest RESURF region due to the base push-out induced snapback.

KW - Electrostatic-Discharge (ESD)

KW - Reduced Surface Field (RESURF)

KW - Transmission-Line Pulse (TLP)

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DO - 10.1109/IPFA58228.2023.10249061

M3 - Conference contribution

AN - SCOPUS:85173561718

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

BT - 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023

Y2 - 24 July 2023 through 27 July 2023

ER -

Lee JH, Li CH, Nidhi K, Lin CH, Chuang CY, Lin WH et al. RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS. In 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA58228.2023.10249061

RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS

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Keywords

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