Resistive switching memory device based on amorphous al-zn-sn-o film for flexible electronics application

Yang Shun Fan; Po Tsun Liu; Ching Hui Hsu; Hsuan Ying Lai

doi:10.1002/j.2168-0159.2012.tb06051.x

Resistive switching memory device based on amorphous al-zn-sn-o film for flexible electronics application

Yang Shun Fan, Po Tsun Liu^*, Ching Hui Hsu, Hsuan Ying Lai

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We have fabricated flexible resistive switching memory (RRAM) using Al-doped zinc tin oxide (AZTO) as resistive switching layers. The AZTO RRAM with robust memory window over hundreds of switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application.

Original language	English
Pages (from-to)	1340-1342
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	43
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2012.tb06051.x
State	Published - 2012
Event	49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States Duration: 3 Jun 2012 → 8 Jun 2012

Keywords

AZTO
Flexible electronic
RRAM
Resistive switching

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10.1002/j.2168-0159.2012.tb06051.x

Cite this

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title = "Resistive switching memory device based on amorphous al-zn-sn-o film for flexible electronics application",

abstract = "We have fabricated flexible resistive switching memory (RRAM) using Al-doped zinc tin oxide (AZTO) as resistive switching layers. The AZTO RRAM with robust memory window over hundreds of switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application.",

keywords = "AZTO, Flexible electronic, RRAM, Resistive switching",

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AU - Fan, Yang Shun

AU - Liu, Po Tsun

AU - Hsu, Ching Hui

AU - Lai, Hsuan Ying

PY - 2012

Y1 - 2012

N2 - We have fabricated flexible resistive switching memory (RRAM) using Al-doped zinc tin oxide (AZTO) as resistive switching layers. The AZTO RRAM with robust memory window over hundreds of switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application.

AB - We have fabricated flexible resistive switching memory (RRAM) using Al-doped zinc tin oxide (AZTO) as resistive switching layers. The AZTO RRAM with robust memory window over hundreds of switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application.

KW - AZTO

KW - Flexible electronic

KW - RRAM

KW - Resistive switching

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DO - 10.1002/j.2168-0159.2012.tb06051.x

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AN - SCOPUS:84983291813

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JO - Digest of Technical Papers - SID International Symposium

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Y2 - 3 June 2012 through 8 June 2012

ER -

Resistive switching memory device based on amorphous al-zn-sn-o film for flexible electronics application

Abstract

Keywords

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