Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory

Pragya Singh; Firman Mangasa Simanjuntak; Amit Kumar; Tseung-Yuen Tseng

doi:10.1016/j.tsf.2018.03.027

Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory

Pragya Singh, Firman Mangasa Simanjuntak, Amit Kumar, Tseung-Yuen Tseng^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 10⁴ s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application.

Original language	English
Pages (from-to)	828-833
Number of pages	6
Journal	Thin Solid Films
Volume	660
DOIs	https://doi.org/10.1016/j.tsf.2018.03.027
State	Published - 30 Aug 2018

Keywords

Chemical solution deposition
Conductive-bridge random-access memory
Gallium
Nanorods
Resistive switching
Zinc oxide

Access to Document

10.1016/j.tsf.2018.03.027

Cite this

@article{63c81ce040fe47a9b266510000581276,

title = "Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory",

abstract = "The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application.",

keywords = "Chemical solution deposition, Conductive-bridge random-access memory, Gallium, Nanorods, Resistive switching, Zinc oxide",

author = "Pragya Singh and Simanjuntak, {Firman Mangasa} and Amit Kumar and Tseung-Yuen Tseng",

year = "2018",

month = aug,

day = "30",

doi = "10.1016/j.tsf.2018.03.027",

language = "English",

volume = "660",

pages = "828--833",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory

AU - Singh, Pragya

AU - Simanjuntak, Firman Mangasa

AU - Kumar, Amit

AU - Tseng, Tseung-Yuen

PY - 2018/8/30

Y1 - 2018/8/30

N2 - The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application.

AB - The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application.

KW - Chemical solution deposition

KW - Conductive-bridge random-access memory

KW - Gallium

KW - Nanorods

KW - Resistive switching

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=85046074642&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2018.03.027

DO - 10.1016/j.tsf.2018.03.027

M3 - Article

AN - SCOPUS:85046074642

SN - 0040-6090

VL - 660

SP - 828

EP - 833

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this