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Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
Hong Yu Chen*, Stefano Brivio, Che Chia Chang, Jacopo Frascaroli, Tuo-Hung Hou, Boris Hudec, Ming Liu, Hangbing Lv, Gabriel Molas, Joon Sohn, Sabina Spiga, V. Mani Teja, Elisa Vianello, H. S.Philip Wong
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
70
Scopus
citations