Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)

F. C. Tsao, J. Y. Chen, Cheng-Huang Kuo, G. C. Chi, C. J. Pan, P. J. Huang, C. J. Tun, B. J. Pong, T. H. Hsueh, C. Y. Chang, S. J. Pearton, F. Ren

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Abstract

ZnO nanowires were grown on 2-μm -thick GaN templates by chemical vapor deposition without employing any metal catalysts. The GaN template was deposited by metal-organic chemical vapor deposition on a c -plane sapphire substrate. The diameters of the resulting nanowires were in the range of 40-250 nm depending on growth time. The ZnO nanowires were vertically well aligned with uniform length, diameter, and distribution density as revealed by electron microscopy. X-ray diffraction spectra showed that ZnO grew in single c -axis orientation with the c axis normal to the GaN basal plane, indicating a heteroepitaxial relationship of (0002)ZnO ∥ (0002)GaN. The lattice constant of the c axis of the ZnO nanowires with diameter of 40 nm was 5.211 Å, which is larger than that of bulk ZnO (5.207 Å). The ZnO nanowires exhibit a residual tensile strain along the c axis, which decreases with increasing diameter.

Original languageEnglish
Article number203110
JournalApplied Physics Letters
Volume92
Issue number20
DOIs
StatePublished - 2008

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