REMPI/MS detection of SiF2 radicals by (3+1) and (1+3) photoionization

J. S. Horwitz; C. S. Dulcey; Ming-Chang Lin

doi:10.1016/0009-2614(88)80415-9

REMPI/MS detection of SiF₂ radicals by (3+1) and (1+3) photoionization

J. S. Horwitz^*, C. S. Dulcey, Ming-Chang Lin

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

SiF₂ has been detected by resonance-enhanced multiphoton ionization mass spectrometry. Two new absorptions have been observed at 481.30 and 379.94 nm and assigned as the (3+1) photoionization via the B̃ ¹B₂ state and the (1+3) absorption via the ã ³B₁ state. A third absorption is observed between 390 and 430 nm which cannot be assigned to any known electronic states of SiF₂. Most likely, this is a (3+1) photoionization via a Rydberg state. SiF₂ radicals were produced by the reaction of SiF₃H with F atoms and by the reaction of F₂ with heated silicon crystals under single gas-surface collision conditions.

Original language	English
Pages (from-to)	165-170
Number of pages	6
Journal	Chemical Physics Letters
Volume	150
Issue number	1-2
DOIs	https://doi.org/10.1016/0009-2614(88)80415-9
State	Published - 9 Sep 1988

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title = "REMPI/MS detection of SiF2 radicals by (3+1) and (1+3) photoionization",

abstract = "SiF2 has been detected by resonance-enhanced multiphoton ionization mass spectrometry. Two new absorptions have been observed at 481.30 and 379.94 nm and assigned as the (3+1) photoionization via the {\~B} 1B2 state and the (1+3) absorption via the {\~a} 3B1 state. A third absorption is observed between 390 and 430 nm which cannot be assigned to any known electronic states of SiF2. Most likely, this is a (3+1) photoionization via a Rydberg state. SiF2 radicals were produced by the reaction of SiF3H with F atoms and by the reaction of F2 with heated silicon crystals under single gas-surface collision conditions.",

author = "Horwitz, {J. S.} and Dulcey, {C. S.} and Ming-Chang Lin",

year = "1988",

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doi = "10.1016/0009-2614(88)80415-9",

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journal = "Chemical Physics Letters",

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T1 - REMPI/MS detection of SiF2 radicals by (3+1) and (1+3) photoionization

AU - Horwitz, J. S.

AU - Dulcey, C. S.

AU - Lin, Ming-Chang

PY - 1988/9/9

Y1 - 1988/9/9

N2 - SiF2 has been detected by resonance-enhanced multiphoton ionization mass spectrometry. Two new absorptions have been observed at 481.30 and 379.94 nm and assigned as the (3+1) photoionization via the B̃ 1B2 state and the (1+3) absorption via the ã 3B1 state. A third absorption is observed between 390 and 430 nm which cannot be assigned to any known electronic states of SiF2. Most likely, this is a (3+1) photoionization via a Rydberg state. SiF2 radicals were produced by the reaction of SiF3H with F atoms and by the reaction of F2 with heated silicon crystals under single gas-surface collision conditions.

AB - SiF2 has been detected by resonance-enhanced multiphoton ionization mass spectrometry. Two new absorptions have been observed at 481.30 and 379.94 nm and assigned as the (3+1) photoionization via the B̃ 1B2 state and the (1+3) absorption via the ã 3B1 state. A third absorption is observed between 390 and 430 nm which cannot be assigned to any known electronic states of SiF2. Most likely, this is a (3+1) photoionization via a Rydberg state. SiF2 radicals were produced by the reaction of SiF3H with F atoms and by the reaction of F2 with heated silicon crystals under single gas-surface collision conditions.

UR - http://www.scopus.com/inward/record.url?scp=0000875884&partnerID=8YFLogxK

U2 - 10.1016/0009-2614(88)80415-9

DO - 10.1016/0009-2614(88)80415-9

M3 - Article

AN - SCOPUS:0000875884

SN - 0009-2614

VL - 150

SP - 165

EP - 170

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-2

ER -

REMPI/MS detection of SiF₂ radicals by (3+1) and (1+3) photoionization

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