REMPI/MS detection of SiF2 radicals by (3+1) and (1+3) photoionization

J. S. Horwitz*, C. S. Dulcey, Ming-Chang Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


SiF2 has been detected by resonance-enhanced multiphoton ionization mass spectrometry. Two new absorptions have been observed at 481.30 and 379.94 nm and assigned as the (3+1) photoionization via the B̃ 1B2 state and the (1+3) absorption via the ã 3B1 state. A third absorption is observed between 390 and 430 nm which cannot be assigned to any known electronic states of SiF2. Most likely, this is a (3+1) photoionization via a Rydberg state. SiF2 radicals were produced by the reaction of SiF3H with F atoms and by the reaction of F2 with heated silicon crystals under single gas-surface collision conditions.

Original languageEnglish
Pages (from-to)165-170
Number of pages6
JournalChemical Physics Letters
Issue number1-2
StatePublished - 9 Sep 1988


Dive into the research topics of 'REMPI/MS detection of SiF2 radicals by (3+1) and (1+3) photoionization'. Together they form a unique fingerprint.

Cite this