Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

Chen Wei Shih; Albert Chin; Chun Fu Lu; Wei Fang Su

doi:10.1038/srep19023

Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

Chen Wei Shih, Albert Chin^*, Chun Fu Lu, Wei Fang Su

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO₂ thickness for both active channel and source-drain regions, very high 147 cm²/Vs field-effect mobility, high I_ON/I_OFF of 2.3 × 10⁷, small 110 mV/dec sub-threshold slope, and a low V_D of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS₂ TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

Original language	English
Article number	19023
Journal	Scientific reports
Volume	6
DOIs	https://doi.org/10.1038/srep19023
State	Published - 8 Jan 2016

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title = "Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals",

abstract = "High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.",

author = "{Wei Shih}, Chen and Albert Chin and {Fu Lu}, Chun and {Fang Su}, Wei",

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AU - Wei Shih, Chen

AU - Chin, Albert

AU - Fu Lu, Chun

AU - Fang Su, Wei

PY - 2016/1/8

Y1 - 2016/1/8

N2 - High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

AB - High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

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ER -

Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

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