Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors

Keyphrases

• High Performance 100%
• On-state Current 100%
• Thin-film Transistors 100%
• P-type 100%
• Field-effect Mobility 100%
• High Hole Mobility 100%
• Metal Oxide Thin-film Transistors 100%
• Reactive Sputtering 50%
• Subthreshold Slope 50%
• Integrated Circuits 50%
• Ultra-low Power 50%
• Three-dimensional (3D) 50%
• Simple Process 50%
• Oxygen Atmosphere 50%
• High Field-effect Mobility 50%
• Heavy Hole 50%
• First-principles 50%
• Low Process Temperature 50%
• Quantum Mechanical Calculations 50%
• Effective Mass 50%
• Single-hole 50%
• Complementary Circuits 50%
• Sputter Damage 50%

Material Science

• Thin-Film Transistor 100%
• Hole Mobility 100%
• Metal Oxide 100%
• Electronic Circuit 66%
• Tin 33%

Engineering

• Thin-Film Transistor 100%
• Subthreshold Slope 33%
• Logic Circuit 33%
• Reactive Sputtering 33%
• Enabling Technology 33%
• Integrated Circuit 33%