Reliable nitride-based near-ultraviolet light-emitting diodes with meshed p-GaN

C. W. Kuo, C. M. Chen, H. C. Feng, Cheng-Huang Kuo

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


This investigation presents nitride-based near ultraviolet (n-UV) light emitting diodes (LEDs) with a meshed p-GaN layer. With 20 mA injection current, it was found that forward voltages were 3.29, 3.31 and 3.39 V while output powers were 7.5, 9.0 and 10.6 mW for the planar indium-tin-oxide (ITO) LED, mesh ITO LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency. It was also found that we could use such a meshed p-GaN layer to achieve reliable nitride-based n-UV LEDs.

Original languageEnglish
Pages (from-to)2080-2082
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number6
StatePublished - 1 Dec 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 16 Sep 200721 Sep 2007


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