Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration

Ming Jiue Yu; Ruei Ping Lin; Yu Hong Chang; Tuo-Hung Hou

doi:10.1109/VLSI-TSA.2016.7480525

Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration

Ming Jiue Yu, Ruei Ping Lin, Yu Hong Chang, Tuo-Hung Hou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The wide band-gap a-IGZO is a promising channel material to realize high-voltage transistors that can be easily integrated on logic ICs by low-Temperature 3D stacking. This monolithic 3D integration would enable on-chip power management to improve power consumption and integration density. We report a high-voltage a-IGZO TFT with the high-k Al2O3 gate dielectric. By using a low-Temperature process below 200 oC, excellent transistor characteristics, including a current on/off ratio of 109, steep subthreshold swing of 0.1 V/decade, high breakdown voltage of 45 V, and robust bias stress reliability have been demonstrated.

Original language	English
Title of host publication	2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781467394789
DOIs	https://doi.org/10.1109/VLSI-TSA.2016.7480525
State	Published - 25 Apr 2016
Event	International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 - Hsinchu, Taiwan Duration: 25 Apr 2016 → 27 Apr 2016

Publication series

Name	2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016

Conference

Conference	International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
Country/Territory	Taiwan
City	Hsinchu
Period	25/04/16 → 27/04/16

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10.1109/VLSI-TSA.2016.7480525

Cite this

Yu, M. J., Lin, R. P., Chang, Y. H., & Hou, T.-H. (2016). Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration. In 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 (pp. 1-2). Article 7480525 (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2016.7480525

Yu, Ming Jiue ; Lin, Ruei Ping ; Chang, Yu Hong et al. / Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration. 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 1-2 (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016).

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title = "Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration",

abstract = "The wide band-gap a-IGZO is a promising channel material to realize high-voltage transistors that can be easily integrated on logic ICs by low-Temperature 3D stacking. This monolithic 3D integration would enable on-chip power management to improve power consumption and integration density. We report a high-voltage a-IGZO TFT with the high-k Al2O3 gate dielectric. By using a low-Temperature process below 200 oC, excellent transistor characteristics, including a current on/off ratio of 109, steep subthreshold swing of 0.1 V/decade, high breakdown voltage of 45 V, and robust bias stress reliability have been demonstrated.",

author = "Yu, {Ming Jiue} and Lin, {Ruei Ping} and Chang, {Yu Hong} and Tuo-Hung Hou",

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Yu, MJ, Lin, RP, Chang, YH & Hou, T-H 2016, Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration. in 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016., 7480525, 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016, Hsinchu, Taiwan, 25/04/16. https://doi.org/10.1109/VLSI-TSA.2016.7480525

Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration. / Yu, Ming Jiue; Lin, Ruei Ping; Chang, Yu Hong et al.
2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1-2 7480525 (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - The wide band-gap a-IGZO is a promising channel material to realize high-voltage transistors that can be easily integrated on logic ICs by low-Temperature 3D stacking. This monolithic 3D integration would enable on-chip power management to improve power consumption and integration density. We report a high-voltage a-IGZO TFT with the high-k Al2O3 gate dielectric. By using a low-Temperature process below 200 oC, excellent transistor characteristics, including a current on/off ratio of 109, steep subthreshold swing of 0.1 V/decade, high breakdown voltage of 45 V, and robust bias stress reliability have been demonstrated.

AB - The wide band-gap a-IGZO is a promising channel material to realize high-voltage transistors that can be easily integrated on logic ICs by low-Temperature 3D stacking. This monolithic 3D integration would enable on-chip power management to improve power consumption and integration density. We report a high-voltage a-IGZO TFT with the high-k Al2O3 gate dielectric. By using a low-Temperature process below 200 oC, excellent transistor characteristics, including a current on/off ratio of 109, steep subthreshold swing of 0.1 V/decade, high breakdown voltage of 45 V, and robust bias stress reliability have been demonstrated.

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Yu MJ, Lin RP, Chang YH, Hou TH. Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration. In 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1-2. 7480525. (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016). doi: 10.1109/VLSI-TSA.2016.7480525

Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration

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