Reliability studies of Hf-doped and NH 3 -nitrided gate dielectric for advanced CMOS application

C. W. Yang*, Y. K. Fang, S. F. Chen, C. S. Lin, C. Y. Lin, W. D. Wang, T. H. Chou, P. J. Lin, M. F. Wang, Tuo-Hung Hou, L. G. Yao, S. C. Chen, M. S. Liang

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Engineering

Material Science