Reliability studies of Hf-doped and NH 3 -nitrided gate dielectric for advanced CMOS application

C. W. Yang*, Y. K. Fang, S. F. Chen, C. S. Lin, C. Y. Lin, W. D. Wang, T. H. Chou, P. J. Lin, M. F. Wang, Tuo-Hung Hou, L. G. Yao, S. C. Chen, M. S. Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


A novel technique is proposed for forming high-K dielectric of HfSiON by sequentially doping base oxide with Hf and nitridation with NH3. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared to conventional SiO2 gate dielectric at the same equivalent oxide thickness (EOT), Additionally, negligible flatband voltage shift is achieved with this technique. Excellent performances in electrical stressing are also demonstrated by the dielectric.

Original languageEnglish
Pages (from-to)407-410
Number of pages4
JournalIEE Proceedings: Circuits, Devices and Systems
Issue number5
StatePublished - Oct 2005


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