Reliability of thin SiO2

K. F. Schuegraf; Chen-Ming Hu

doi:10.1088/0268-1242/9/5/002

Reliability of thin SiO₂

K. F. Schuegraf^*, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Review article › peer-review

107 Scopus citations

Abstract

This article reviews reliability phenomena in thin silicon dioxide. We discuss a comprehensive framework for evaluating measured SiO₂ breakdown data which enables assurance of built-in oxide reliability for scaled MOS technologies. Promising technological improvements for improving SiO ₂ reliability are also reviewed. We discuss an integrative view for explaining the many diverse observations about the process of oxide wear-out and failure.

Original language	English
Article number	002
Pages (from-to)	989-1004
Number of pages	16
Journal	Semiconductor Science and Technology
Volume	9
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/9/5/002
State	Published - 1 Dec 1994

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title = "Reliability of thin SiO2",

abstract = "This article reviews reliability phenomena in thin silicon dioxide. We discuss a comprehensive framework for evaluating measured SiO2 breakdown data which enables assurance of built-in oxide reliability for scaled MOS technologies. Promising technological improvements for improving SiO 2 reliability are also reviewed. We discuss an integrative view for explaining the many diverse observations about the process of oxide wear-out and failure.",

author = "Schuegraf, {K. F.} and Chen-Ming Hu",

year = "1994",

month = dec,

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doi = "10.1088/0268-1242/9/5/002",

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TY - JOUR

T1 - Reliability of thin SiO2

AU - Schuegraf, K. F.

AU - Hu, Chen-Ming

PY - 1994/12/1

Y1 - 1994/12/1

N2 - This article reviews reliability phenomena in thin silicon dioxide. We discuss a comprehensive framework for evaluating measured SiO2 breakdown data which enables assurance of built-in oxide reliability for scaled MOS technologies. Promising technological improvements for improving SiO 2 reliability are also reviewed. We discuss an integrative view for explaining the many diverse observations about the process of oxide wear-out and failure.

AB - This article reviews reliability phenomena in thin silicon dioxide. We discuss a comprehensive framework for evaluating measured SiO2 breakdown data which enables assurance of built-in oxide reliability for scaled MOS technologies. Promising technological improvements for improving SiO 2 reliability are also reviewed. We discuss an integrative view for explaining the many diverse observations about the process of oxide wear-out and failure.

UR - http://www.scopus.com/inward/record.url?scp=0028425839&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/9/5/002

DO - 10.1088/0268-1242/9/5/002

M3 - Review article

AN - SCOPUS:0028425839

SN - 0268-1242

VL - 9

SP - 989

EP - 1004

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5

M1 - 002

ER -

Reliability of thin SiO₂

Abstract

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