Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer

Tzu I. Tsai; Yao Jen Lee; King Sheng Chen; Jeff Wang; Chia Chen Wan; Fu Kuo Hsueh; Horng-Chih Lin; Tien-Sheng Chao; Tiao Yuan Huang

doi:10.1109/ISDRS.2007.4422398

Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer

Tzu I. Tsai, Yao Jen Lee, King Sheng Chen, Jeff Wang, Chia Chen Wan, Fu Kuo Hsueh, Horng-Chih Lin, Tien-Sheng Chao, Tiao Yuan Huang

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422398
State	Published - 1 Dec 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 Dec 2007 → 14 Dec 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

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10.1109/ISDRS.2007.4422398

Cite this

Tsai, T. I., Lee, Y. J., Chen, K. S., Wang, J., Wan, C. C., Hsueh, F. K., Lin, H.-C., Chao, T.-S., & Huang, T. Y. (2007). Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer. In 2007 International Semiconductor Device Research Symposium, ISDRS Article 4422398 (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422398

@inproceedings{5cda26df459e4fc7965a18bada91c782,

title = "Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer",

author = "Tsai, {Tzu I.} and Lee, {Yao Jen} and Chen, {King Sheng} and Jeff Wang and Wan, {Chia Chen} and Hsueh, {Fu Kuo} and Horng-Chih Lin and Tien-Sheng Chao and Huang, {Tiao Yuan}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/ISDRS.2007.4422398",

language = "English",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Tsai, TI, Lee, YJ, Chen, KS, Wang, J, Wan, CC, Hsueh, FK, Lin, H-C , Chao, T-S & Huang, TY 2007, Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422398, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422398

Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer. / Tsai, Tzu I.; Lee, Yao Jen; Chen, King Sheng et al.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422398 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer

AU - Tsai, Tzu I.

AU - Lee, Yao Jen

AU - Chen, King Sheng

AU - Wang, Jeff

AU - Wan, Chia Chen

AU - Hsueh, Fu Kuo

AU - Lin, Horng-Chih

AU - Chao, Tien-Sheng

AU - Huang, Tiao Yuan

PY - 2007/12/1

Y1 - 2007/12/1

UR - http://www.scopus.com/inward/record.url?scp=44949196873&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422398

DO - 10.1109/ISDRS.2007.4422398

M3 - Conference contribution

AN - SCOPUS:44949196873

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer

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