Reliability of Multiple-Layer Stacked Gate-All-Around Poly-Si Nanosheet Channel Ferroelectric HfxZr1-xO2FETs With NH3Plasma Treatment

Dong Ru Hsieh, Chia Chin Lee, Tzu Chieh Hong, Wei Ju Yeh, Tien Sheng Chao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, multiple-layer stacked gate-all-around polycrystalline silicon (poly-Si) nanosheet channel ferroelectric-HfxZr1-xO2 (FE-HZO) FETs without and with NH3 plasma treatment at both the TiN/HZO and ZrO2/TiN interfaces were successfully fabricated, and their reliability was investigated and discussed for the first time. The devices after a positive gate bias stress (PGBS) test revealed that the average subthreshold swing (SS) degradation and the threshold voltage shift can be considerably improved by NH3 plasma treatment at both the TiN/HZO and ZrO2/TiN interfaces. Furthermore, the devices after NH3 plasma treatment show the significantly reduced degradation rates which are related to transconductance, ON-current, and gate leakage current. By using NH3 plasma treatment at both the TiN/HZO and ZrO2/TiN interfaces to significantly enhance the gate-stack quality and effectively suppress the generation of oxygen vacancies and interface traps during the PGBS test, the devices exhibit an excellent SS of 51.4 mV/dec., a high driving current of 49.5 μA/μm, and a strong PGBS immunity, making them attractive for monolithic 3-D integrated circuit applications.

Original languageEnglish
Pages (from-to)3915-3920
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume70
Issue number7
DOIs
StatePublished - 1 Jul 2023

Keywords

  • Ferroelectricity
  • HfZrO(HZO)
  • Internet of Things (IoT)
  • NHplasma treatment
  • gate-all-around (GAA)
  • internal metal gate
  • monolithic 3-D integrated circuit (M3-D IC)
  • polycrystalline silicon (poly-Si)
  • positive gate bias stress (PGBS)
  • reliability
  • seed layer
  • stacked nanosheet (NS) channel

Fingerprint

Dive into the research topics of 'Reliability of Multiple-Layer Stacked Gate-All-Around Poly-Si Nanosheet Channel Ferroelectric HfxZr1-xO2FETs With NH3Plasma Treatment'. Together they form a unique fingerprint.

Cite this