Skip to main navigation
Skip to search
Skip to main content
Sort by
Keyphrases
Plasma-enhanced Chemical Vapor Deposition (PECVD)
100%
Amorphous InGaZnO (a-IGZO)
100%
Atmospheric Pressure
100%
Microwave Annealing
100%
Memory Device
100%
Resistive Random Access Memory (ReRAM)
100%
Pressure Plasma
100%
Passivation
33%
Annealing Conditions
33%
Environmental Conditions
33%
Thin Solid Films
33%
Low Power Consumption
16%
Flash Memory
16%
Electrical Characteristics
16%
Device Reliability
16%
Switch number
16%
Metal-insulator-metal Structure
16%
Simple Metals
16%
Operation Speed
16%
Cost Reduction
16%
Annealing Treatment
16%
Reliability Issues
16%
Retention Time
16%
Operation Voltage
16%
Nonvolatile Memory Technologies
16%
Fabrication Cost
16%
Cycle Retention
16%
Switching Cycle
16%
Power Consumption Cost
16%
Storage Layer
16%
Data Retention Time
16%
Embedded Nonvolatile Memory (eNVM)
16%
Electrical Enhancement
16%
Amorphous Oxide Thin-film Transistors
16%
AP-PECVD
16%
Nanoscale Science
16%
Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Pressure Plasma
100%
Resistive Random Access Memory
100%
Random Access Memory Device
100%
Passivation
33%
Retention Time
33%
Solid Film
33%
Low Power Consumption
16%
Flash Memory
16%
Speed Operation
16%
Metal-Insulator-Metal
16%
Nanoscale
16%
Thin-Film Transistor
16%
Data Retention
16%
Nonvolatile Memory
16%
Reliability Issue
16%
Amorphous Oxide
16%
Oxide Semiconductor
16%
Material Science
Gallium
100%
Zinc Oxide
100%
Indium
100%
Plasma-Enhanced Chemical Vapor Deposition
100%
Resistive Random-Access Memory
100%
Electrical Property
16%
Thin-Film Transistor
16%
Metal-Insulator-Metal Structure
16%
Oxide Semiconductor
16%