TY - GEN
T1 - Reliability enhancement of high-mobility amorphous indium-tungsten oxide thin film transistor
AU - Liu, Po-Tsun
AU - Chang, Chih Hsiang
AU - Chang, Chih Jui
PY - 2015/1/1
Y1 - 2015/1/1
N2 - In this work, a high-mobility amorphous In-W-O thin transistor (a-IWO TFT) is studied for flat panel displays applications. The effects of oxygen content on the electrical performance and reliability of a-IWO TFTs are mainly investigated by modulating oxygen partial pressure during IWO channel deposition. Experimental results show the high oxygen partial pressure will degrade the electrical stability and cause a large threshold voltage shift (ΔVT) in the a-IWO TFT device. To elucidate the origin of electrical instabilities, the interface trap densities, Dit, at the interface between gate insulator and IWO layer as well as bulk trap density, Nt, in the bulk of IWO film were extracted for comparisons. It shows that the interface states are increased as increasing oxygen partial pressures. The enhanced trapping of electron due to the increased interface states is considered to lead to large ΔVT in the TFT with increasing oxygen partial pressures.
AB - In this work, a high-mobility amorphous In-W-O thin transistor (a-IWO TFT) is studied for flat panel displays applications. The effects of oxygen content on the electrical performance and reliability of a-IWO TFTs are mainly investigated by modulating oxygen partial pressure during IWO channel deposition. Experimental results show the high oxygen partial pressure will degrade the electrical stability and cause a large threshold voltage shift (ΔVT) in the a-IWO TFT device. To elucidate the origin of electrical instabilities, the interface trap densities, Dit, at the interface between gate insulator and IWO layer as well as bulk trap density, Nt, in the bulk of IWO film were extracted for comparisons. It shows that the interface states are increased as increasing oxygen partial pressures. The enhanced trapping of electron due to the increased interface states is considered to lead to large ΔVT in the TFT with increasing oxygen partial pressures.
UR - http://www.scopus.com/inward/record.url?scp=84931354797&partnerID=8YFLogxK
U2 - 10.1149/06701.0009ecst
DO - 10.1149/06701.0009ecst
M3 - Conference contribution
AN - SCOPUS:84931354797
T3 - ECS Transactions
SP - 9
EP - 16
BT - 2015 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2015
A2 - Kuo, Y.
PB - Electrochemical Society Inc.
T2 - 2015 5th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2015
Y2 - 14 June 2015 through 18 June 2015
ER -