Reliability and performance study of ZnO co-sputtered InGaZnO thin film transistors under various ambient conditions

Nidhi Tiwari; Ram Narayan Chauhan; Po-Tsun Liu; Han Ping D. Shieh

Reliability and performance study of ZnO co-sputtered InGaZnO thin film transistors under various ambient conditions

Nidhi Tiwari, Ram Narayan Chauhan, Po-Tsun Liu, Han Ping D. Shieh

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

ZnO co-sputtered IGZO TFTs were fabricated and systematically investigated the impact of various annealing environments on their performance characteristics. The characteristics were improved in N₂ ambient-displaying field effect mobility - 16.10 cm²/Vs, threshold voltage - 1.5V, sub-threshold swing - 0.21 V/decade and NBIS shifting -2.75 V.

Original language	English
Title of host publication	22nd International Display Workshops, IDW 2015
Publisher	International Display Workshops
Pages	666-667
Number of pages	2
ISBN (Electronic)	9781510845503
State	Published - 1 Jan 2015
Event	22nd International Display Workshops, IDW 2015 - Otsu, Japan Duration: 9 Dec 2015 → 11 Dec 2015

Publication series

Name	Proceedings of the International Display Workshops
Volume	2
ISSN (Print)	1883-2490

Conference

Conference	22nd International Display Workshops, IDW 2015
Country/Territory	Japan
City	Otsu
Period	9/12/15 → 11/12/15

Keywords

Sputtering
Thin film transistors
ZnO

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "Reliability and performance study of ZnO co-sputtered InGaZnO thin film transistors under various ambient conditions",

abstract = "ZnO co-sputtered IGZO TFTs were fabricated and systematically investigated the impact of various annealing environments on their performance characteristics. The characteristics were improved in N2 ambient-displaying field effect mobility - 16.10 cm2/Vs, threshold voltage - 1.5V, sub-threshold swing - 0.21 V/decade and NBIS shifting -2.75 V.",

keywords = "Sputtering, Thin film transistors, ZnO",

author = "Nidhi Tiwari and Chauhan, {Ram Narayan} and Po-Tsun Liu and Shieh, {Han Ping D.}",

year = "2015",

month = jan,

day = "1",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "666--667",

booktitle = "22nd International Display Workshops, IDW 2015",

note = "22nd International Display Workshops, IDW 2015 ; Conference date: 09-12-2015 Through 11-12-2015",

}

Tiwari, N, Chauhan, RN, Liu, P-T & Shieh, HPD 2015, Reliability and performance study of ZnO co-sputtered InGaZnO thin film transistors under various ambient conditions. in 22nd International Display Workshops, IDW 2015. Proceedings of the International Display Workshops, vol. 2, International Display Workshops, pp. 666-667, 22nd International Display Workshops, IDW 2015, Otsu, Japan, 9/12/15.

Reliability and performance study of ZnO co-sputtered InGaZnO thin film transistors under various ambient conditions. / Tiwari, Nidhi; Chauhan, Ram Narayan; Liu, Po-Tsun et al.
22nd International Display Workshops, IDW 2015. International Display Workshops, 2015. p. 666-667 (Proceedings of the International Display Workshops; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Reliability and performance study of ZnO co-sputtered InGaZnO thin film transistors under various ambient conditions

AU - Tiwari, Nidhi

AU - Chauhan, Ram Narayan

AU - Liu, Po-Tsun

AU - Shieh, Han Ping D.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - ZnO co-sputtered IGZO TFTs were fabricated and systematically investigated the impact of various annealing environments on their performance characteristics. The characteristics were improved in N2 ambient-displaying field effect mobility - 16.10 cm2/Vs, threshold voltage - 1.5V, sub-threshold swing - 0.21 V/decade and NBIS shifting -2.75 V.

AB - ZnO co-sputtered IGZO TFTs were fabricated and systematically investigated the impact of various annealing environments on their performance characteristics. The characteristics were improved in N2 ambient-displaying field effect mobility - 16.10 cm2/Vs, threshold voltage - 1.5V, sub-threshold swing - 0.21 V/decade and NBIS shifting -2.75 V.

KW - Sputtering

KW - Thin film transistors

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=85056409946&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85056409946

T3 - Proceedings of the International Display Workshops

SP - 666

EP - 667

BT - 22nd International Display Workshops, IDW 2015

PB - International Display Workshops

T2 - 22nd International Display Workshops, IDW 2015

Y2 - 9 December 2015 through 11 December 2015

ER -

Reliability and performance study of ZnO co-sputtered InGaZnO thin film transistors under various ambient conditions

Abstract

Publication series

Conference

Keywords

UN SDGs

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