Reliability and performance study of ZnO co-sputtered InGaZnO thin film transistors under various ambient conditions

Nidhi Tiwari, Ram Narayan Chauhan, Po-Tsun Liu, Han Ping D. Shieh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

ZnO co-sputtered IGZO TFTs were fabricated and systematically investigated the impact of various annealing environments on their performance characteristics. The characteristics were improved in N2 ambient-displaying field effect mobility - 16.10 cm2/Vs, threshold voltage - 1.5V, sub-threshold swing -0.21 V/decade and NBIS shifting ∼ -2.75V.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages140-141
Number of pages2
ISBN (Electronic)9781510845503
StatePublished - 1 Jan 2015
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 9 Dec 201511 Dec 2015

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference22nd International Display Workshops, IDW 2015
Country/TerritoryJapan
CityOtsu
Period9/12/1511/12/15

Keywords

  • Sputtering
  • Thin film transistors
  • ZnO

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