Relation of contact resistance reduction and process parameters of bonded copper interconnects in three-dimensional integration technology

Kuan-Neng Chen*, A. Fan, C. S. Tan, R. Reif

*Corresponding author for this work

    Research output: Contribution to conferencePaperpeer-review

    Abstract

    Contact resistances of bonded copper interconnects in three-dimensional integration technology under different bonding conditions are investigated by using a novel test structure. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with the interconnect sizes. Underlying physical mechanism is discussed. The relationship between specific contact resistance and bonded wafer location is discussed as well. The specific contact resistance shows a lower value at the center of the wafer. Stability and reversibility tests show that the specific contact resistance does not change when the stress current is increased gradually or decreased after that. The excellent stability and reversibility of specific contact resistances shows that the microstructure of bonded Cu interconnects has reached a stable state.

    Original languageEnglish
    Pages1-5
    Number of pages5
    StatePublished - Oct 2003
    EventCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium - Orlando, FL, United States
    Duration: 12 Oct 200317 Oct 2003

    Conference

    ConferenceCopper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics II - Proceedings of the International Symposium
    Country/TerritoryUnited States
    CityOrlando, FL
    Period12/10/0317/10/03

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