Regrowth of high quality heavily Si-doped nGaN utilizing nano-rod GaN template

Cheng-Huang Kuo; Li Chuan Chang; Hsiu Mei Chou

doi:10.1149/1.3617533

Regrowth of high quality heavily Si-doped nGaN utilizing nano-rod GaN template

Cheng-Huang Kuo^*, Li Chuan Chang, Hsiu Mei Chou

^*Corresponding author for this work

College of Photonics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this study, heavily Si-doped n-type GaN (n-GaN) epitaxial layers with and without nano-rod GaN (NR GaN) template were grown by metal organic chemical vapor deposition (MOCVD) system. It was found that we could achieve high-qulaity heavily Si-doped n-GaN layers by using the NR GaN template. It was also found that we can reduce etching pits density in n-GaN (1.5E19 cm ^-3) epitaxial layer by a factor of 2.82 using the NR GaN template, as compared to the conventional sapphire substrate.

Original language	English
Pages (from-to)	H961-H964
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	10
DOIs	https://doi.org/10.1149/1.3617533
State	Published - 31 Aug 2011

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title = "Regrowth of high quality heavily Si-doped nGaN utilizing nano-rod GaN template",

abstract = "In this study, heavily Si-doped n-type GaN (n-GaN) epitaxial layers with and without nano-rod GaN (NR GaN) template were grown by metal organic chemical vapor deposition (MOCVD) system. It was found that we could achieve high-qulaity heavily Si-doped n-GaN layers by using the NR GaN template. It was also found that we can reduce etching pits density in n-GaN (1.5E19 cm -3) epitaxial layer by a factor of 2.82 using the NR GaN template, as compared to the conventional sapphire substrate.",

author = "Cheng-Huang Kuo and Chang, {Li Chuan} and Chou, {Hsiu Mei}",

year = "2011",

month = aug,

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doi = "10.1149/1.3617533",

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journal = "Journal of the Electrochemical Society",

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T1 - Regrowth of high quality heavily Si-doped nGaN utilizing nano-rod GaN template

AU - Kuo, Cheng-Huang

AU - Chang, Li Chuan

AU - Chou, Hsiu Mei

PY - 2011/8/31

Y1 - 2011/8/31

N2 - In this study, heavily Si-doped n-type GaN (n-GaN) epitaxial layers with and without nano-rod GaN (NR GaN) template were grown by metal organic chemical vapor deposition (MOCVD) system. It was found that we could achieve high-qulaity heavily Si-doped n-GaN layers by using the NR GaN template. It was also found that we can reduce etching pits density in n-GaN (1.5E19 cm -3) epitaxial layer by a factor of 2.82 using the NR GaN template, as compared to the conventional sapphire substrate.

AB - In this study, heavily Si-doped n-type GaN (n-GaN) epitaxial layers with and without nano-rod GaN (NR GaN) template were grown by metal organic chemical vapor deposition (MOCVD) system. It was found that we could achieve high-qulaity heavily Si-doped n-GaN layers by using the NR GaN template. It was also found that we can reduce etching pits density in n-GaN (1.5E19 cm -3) epitaxial layer by a factor of 2.82 using the NR GaN template, as compared to the conventional sapphire substrate.

UR - http://www.scopus.com/inward/record.url?scp=80052086788&partnerID=8YFLogxK

U2 - 10.1149/1.3617533

DO - 10.1149/1.3617533

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VL - 158

SP - H961-H964

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 10

ER -

Regrowth of high quality heavily Si-doped nGaN utilizing nano-rod GaN template

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