Reflectance of sub-wavelength structure on silicon nitride for solar cell application

Kartika Chandra Sahoo; Yi-Ming Li; Edward Yi Chang; Men Ku Lin; Jin Hua Huang

doi:10.1109/SISPAD.2009.5290233

Reflectance of sub-wavelength structure on silicon nitride for solar cell application

Kartika Chandra Sahoo, Yi-Ming Li, Edward Yi Chang, Men Ku Lin, Jin Hua Huang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, reflection properties of sub-wavelength structures (SWS) on silicon nitride (Si₃N₄) antireflective coatings are investigated. Numerical calculation of SWS reflection based on a rigorous coupled-wave approach is conducted and compared with the measurement of fabricated samples. We compare the results of single- and double-layer- antireflection (SLAR and DLAR) coatings with SWS on Si₃N₄, taking into account average residual reflectivity over a range of wavelengths, where the solar efficiency is further estimated. A low average residual reflectivity of 9.56% could be obtained for a Si₃N₄ SWS height and non-etched layer of 140 nm and 60 nm respectively, which will be less than 80 nm Si3N4 SLAR (∼15%) and almost the same as that of a DLAR with 60 nm Si₃N₄ and 70 nm magnesium fluoride (∼10%).

Original language	English
Title of host publication	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs	https://doi.org/10.1109/SISPAD.2009.5290233
State	Published - 1 Dec 2009
Event	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States Duration: 9 Sep 2009 → 11 Sep 2009

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
Country/Territory	United States
City	San Diego, CA
Period	9/09/09 → 11/09/09

Keywords

Antireflection coating
Efficiency
Fabrication and characterization
Maxwell equations
Modeling and simulation
Reflectance
Rigorous coupled-wave approach
Silicon nitride
Sub-wavelength structure

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10.1109/SISPAD.2009.5290233

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Sahoo, K. C., Li, Y.-M., Chang, E. Y., Lin, M. K., & Huang, J. H. (2009). Reflectance of sub-wavelength structure on silicon nitride for solar cell application. In SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices Article 5290233 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2009.5290233

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title = "Reflectance of sub-wavelength structure on silicon nitride for solar cell application",

abstract = "In this study, reflection properties of sub-wavelength structures (SWS) on silicon nitride (Si3N4) antireflective coatings are investigated. Numerical calculation of SWS reflection based on a rigorous coupled-wave approach is conducted and compared with the measurement of fabricated samples. We compare the results of single- and double-layer- antireflection (SLAR and DLAR) coatings with SWS on Si3N4, taking into account average residual reflectivity over a range of wavelengths, where the solar efficiency is further estimated. A low average residual reflectivity of 9.56% could be obtained for a Si3N4 SWS height and non-etched layer of 140 nm and 60 nm respectively, which will be less than 80 nm Si3N4 SLAR (∼15%) and almost the same as that of a DLAR with 60 nm Si3N4 and 70 nm magnesium fluoride (∼10%).",

keywords = "Antireflection coating, Efficiency, Fabrication and characterization, Maxwell equations, Modeling and simulation, Reflectance, Rigorous coupled-wave approach, Silicon nitride, Sub-wavelength structure",

author = "Sahoo, {Kartika Chandra} and Yi-Ming Li and Chang, {Edward Yi} and Lin, {Men Ku} and Huang, {Jin Hua}",

year = "2009",

month = dec,

day = "1",

doi = "10.1109/SISPAD.2009.5290233",

language = "English",

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series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

booktitle = "SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices",

note = "SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices ; Conference date: 09-09-2009 Through 11-09-2009",

}

Sahoo, KC, Li, Y-M , Chang, EY, Lin, MK & Huang, JH 2009, Reflectance of sub-wavelength structure on silicon nitride for solar cell application. in SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices., 5290233, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States, 9/09/09. https://doi.org/10.1109/SISPAD.2009.5290233

Reflectance of sub-wavelength structure on silicon nitride for solar cell application. / Sahoo, Kartika Chandra; Li, Yi-Ming ; Chang, Edward Yi et al.
SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices. 2009. 5290233 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Reflectance of sub-wavelength structure on silicon nitride for solar cell application

AU - Sahoo, Kartika Chandra

AU - Li, Yi-Ming

AU - Chang, Edward Yi

AU - Lin, Men Ku

AU - Huang, Jin Hua

PY - 2009/12/1

Y1 - 2009/12/1

N2 - In this study, reflection properties of sub-wavelength structures (SWS) on silicon nitride (Si3N4) antireflective coatings are investigated. Numerical calculation of SWS reflection based on a rigorous coupled-wave approach is conducted and compared with the measurement of fabricated samples. We compare the results of single- and double-layer- antireflection (SLAR and DLAR) coatings with SWS on Si3N4, taking into account average residual reflectivity over a range of wavelengths, where the solar efficiency is further estimated. A low average residual reflectivity of 9.56% could be obtained for a Si3N4 SWS height and non-etched layer of 140 nm and 60 nm respectively, which will be less than 80 nm Si3N4 SLAR (∼15%) and almost the same as that of a DLAR with 60 nm Si3N4 and 70 nm magnesium fluoride (∼10%).

AB - In this study, reflection properties of sub-wavelength structures (SWS) on silicon nitride (Si3N4) antireflective coatings are investigated. Numerical calculation of SWS reflection based on a rigorous coupled-wave approach is conducted and compared with the measurement of fabricated samples. We compare the results of single- and double-layer- antireflection (SLAR and DLAR) coatings with SWS on Si3N4, taking into account average residual reflectivity over a range of wavelengths, where the solar efficiency is further estimated. A low average residual reflectivity of 9.56% could be obtained for a Si3N4 SWS height and non-etched layer of 140 nm and 60 nm respectively, which will be less than 80 nm Si3N4 SLAR (∼15%) and almost the same as that of a DLAR with 60 nm Si3N4 and 70 nm magnesium fluoride (∼10%).

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KW - Efficiency

KW - Fabrication and characterization

KW - Maxwell equations

KW - Modeling and simulation

KW - Reflectance

KW - Rigorous coupled-wave approach

KW - Silicon nitride

KW - Sub-wavelength structure

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SN - 9781424439492

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

BT - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices

T2 - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices

Y2 - 9 September 2009 through 11 September 2009

ER -

Reflectance of sub-wavelength structure on silicon nitride for solar cell application

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