Reduction of photoleakage current in polycrystalline silicon thin-film transistor using N H3 plasma treatment on buffer layer

Hau Yan Lu*, Ting Chang Chang, Po-Tsun Liu, Hung Wei Li, Chin Wei Hu, Kun Chin Lin, Chao Chun Wang, Ya-Hsiang Tai, Sien Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The technology of polycrystalline silicon thin-film transistors (poly-Si TFTs) with low photoleakage current is developed in this work. The electrical characteristics of poly-Si TFTs under illumination were significantly improved employing the N H3 plasma treatment on the buffer layer, with no need for complicate device structure and additional masks. The trap states that originated from the plasma bombardment on the interface between the poly-Si layer and buffer oxide can effectively recombine the light-induced electron-hole pairs. The fewer residual electron-hole pairs lead to the lower photoleakage current and improved subthreshold swing, as well as maintaining good electrical characteristics in the dark sate.

Original languageEnglish
Article number153507
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number15
DOIs
StatePublished - 2008

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