Reduction of nickel-silicided junction leakage by nitrogen ion implantation

Tien-Sheng Chao; Liang Yao Lee

doi:10.1143/JJAP.41.L124

Reduction of nickel-silicided junction leakage by nitrogen ion implantation

Tien-Sheng Chao^*, Liang Yao Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

Abstract

Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 × 10^-9 A/cm², which represents 2-4 times reduction compared to conventional counterparts.

Original language	American English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	2 A
DOIs	https://doi.org/10.1143/JJAP.41.L124
State	Published - 1 Feb 2002

Keywords

Junction
Leakage
Nickel
Nitrogen
Silicide

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10.1143/JJAP.41.L124

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title = "Reduction of nickel-silicided junction leakage by nitrogen ion implantation",

abstract = "Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 × 10-9 A/cm2, which represents 2-4 times reduction compared to conventional counterparts.",

keywords = "Junction, Leakage, Nickel, Nitrogen, Silicide",

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AU - Chao, Tien-Sheng

AU - Lee, Liang Yao

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N2 - Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 × 10-9 A/cm2, which represents 2-4 times reduction compared to conventional counterparts.

AB - Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 × 10-9 A/cm2, which represents 2-4 times reduction compared to conventional counterparts.

KW - Junction

KW - Leakage

KW - Nickel

KW - Nitrogen

KW - Silicide

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DO - 10.1143/JJAP.41.L124

M3 - Article

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VL - 41

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 2 A

ER -

Reduction of nickel-silicided junction leakage by nitrogen ion implantation

Abstract

Keywords

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