Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels

Yung Chun Wu; Ting Chang Chang; Po-Tsun Liu; Cheng Wei Chou; Yuan Chun Wu; Chun Hao Tu; Chun Yen Chang

doi:10.1109/LED.2005.854382

Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels

Yung Chun Wu, Ting Chang Chang, Po-Tsun Liu, Cheng Wei Chou, Yuan Chun Wu, Chun Hao Tu, Chun Yen Chang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This letter addresses the leakage current in nickel (Ni) metal-induced lateral crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with multiple ninowire channels and dual-gate. Experimental results reveal that applying multiple nanowire channels improves the Ni-MILC poly-Si TFT performance. However, the leakage current of both single-gate with single-channel and multiple nanowire channels remains high (>10^-8 A), because of the field emission of carrier, through the poly-Si grain traps and the defects caused by Ni contamination. Applying the dual-gate structure can suppress the f lectrical filed in the drain depletion region, significantly reducing the leakage current of the Ni-MILC poly-Si TFT, increasing the ON/OFF ratio.

Original language	English
Pages (from-to)	646-648
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	26
Issue number	9
DOIs	https://doi.org/10.1109/LED.2005.854382
State	Published - Sep 2005

Keywords

Dual-gate
Metal-induced lateral crystallization (MILC)
Nanowire
Thin-film transistor (TFT)

Access to Document

10.1109/LED.2005.854382

Cite this

@article{c27a140abeea40689c86c85d70a6564a,

title = "Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels",

abstract = "This letter addresses the leakage current in nickel (Ni) metal-induced lateral crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with multiple ninowire channels and dual-gate. Experimental results reveal that applying multiple nanowire channels improves the Ni-MILC poly-Si TFT performance. However, the leakage current of both single-gate with single-channel and multiple nanowire channels remains high (>10-8 A), because of the field emission of carrier, through the poly-Si grain traps and the defects caused by Ni contamination. Applying the dual-gate structure can suppress the f lectrical filed in the drain depletion region, significantly reducing the leakage current of the Ni-MILC poly-Si TFT, increasing the ON/OFF ratio.",

keywords = "Dual-gate, Metal-induced lateral crystallization (MILC), Nanowire, Thin-film transistor (TFT)",

author = "Wu, {Yung Chun} and Chang, {Ting Chang} and Po-Tsun Liu and Chou, {Cheng Wei} and Wu, {Yuan Chun} and Tu, {Chun Hao} and Chang, {Chun Yen}",

year = "2005",

month = sep,

doi = "10.1109/LED.2005.854382",

language = "English",

volume = "26",

pages = "646--648",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels

AU - Wu, Yung Chun

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Chou, Cheng Wei

AU - Wu, Yuan Chun

AU - Tu, Chun Hao

AU - Chang, Chun Yen

PY - 2005/9

Y1 - 2005/9

N2 - This letter addresses the leakage current in nickel (Ni) metal-induced lateral crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with multiple ninowire channels and dual-gate. Experimental results reveal that applying multiple nanowire channels improves the Ni-MILC poly-Si TFT performance. However, the leakage current of both single-gate with single-channel and multiple nanowire channels remains high (>10-8 A), because of the field emission of carrier, through the poly-Si grain traps and the defects caused by Ni contamination. Applying the dual-gate structure can suppress the f lectrical filed in the drain depletion region, significantly reducing the leakage current of the Ni-MILC poly-Si TFT, increasing the ON/OFF ratio.

AB - This letter addresses the leakage current in nickel (Ni) metal-induced lateral crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with multiple ninowire channels and dual-gate. Experimental results reveal that applying multiple nanowire channels improves the Ni-MILC poly-Si TFT performance. However, the leakage current of both single-gate with single-channel and multiple nanowire channels remains high (>10-8 A), because of the field emission of carrier, through the poly-Si grain traps and the defects caused by Ni contamination. Applying the dual-gate structure can suppress the f lectrical filed in the drain depletion region, significantly reducing the leakage current of the Ni-MILC poly-Si TFT, increasing the ON/OFF ratio.

KW - Dual-gate

KW - Metal-induced lateral crystallization (MILC)

KW - Nanowire

KW - Thin-film transistor (TFT)

UR - http://www.scopus.com/inward/record.url?scp=26444449946&partnerID=8YFLogxK

U2 - 10.1109/LED.2005.854382

DO - 10.1109/LED.2005.854382

M3 - Article

AN - SCOPUS:26444449946

SN - 0741-3106

VL - 26

SP - 646

EP - 648

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 9

ER -

Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this