Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H2 plasma treatment

Jia Min Shieh; Kou Chiang Tsai; Bau Tong Dai; Yew-Chuhg Wu; Yu Hen Wu

doi:10.1116/1.1494067

Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H₂ plasma treatment

Jia Min Shieh^*, Kou Chiang Tsai, Bau Tong Dai, Yew-Chuhg Wu, Yu Hen Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

A novel two-step hydrogen plasma treatment was applied to low-k a-C:F to passivate the chemical structures against thermal stress, and attack by oxygen during patterning processes. First, the hydrogen plasma treatment increased the thermal stability of a-C:F films. Hydrogen elements penetrated deeply into a-C:F films, providing an initial passivation against sequential damage caused by etching plasmas. Further hydrogen treatment could repair the damage caused by the etching of H₂-treated a-C:F films.

Original language	American English
Pages (from-to)	1476-1481
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1494067
State	Published - 1 Jul 2002
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: 6 Jan 2002 → 10 Jan 2002

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title = "Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H2 plasma treatment",

abstract = "A novel two-step hydrogen plasma treatment was applied to low-k a-C:F to passivate the chemical structures against thermal stress, and attack by oxygen during patterning processes. First, the hydrogen plasma treatment increased the thermal stability of a-C:F films. Hydrogen elements penetrated deeply into a-C:F films, providing an initial passivation against sequential damage caused by etching plasmas. Further hydrogen treatment could repair the damage caused by the etching of H2-treated a-C:F films.",

author = "Shieh, {Jia Min} and Tsai, {Kou Chiang} and Dai, {Bau Tong} and Yew-Chuhg Wu and Wu, {Yu Hen}",

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doi = "10.1116/1.1494067",

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issn = "1071-1023",

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number = "4",

note = "Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference date: 06-01-2002 Through 10-01-2002",

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Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H₂ plasma treatment. / Shieh, Jia Min; Tsai, Kou Chiang; Dai, Bau Tong et al.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 4, 01.07.2002, p. 1476-1481.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H2 plasma treatment

AU - Shieh, Jia Min

AU - Tsai, Kou Chiang

AU - Dai, Bau Tong

AU - Wu, Yew-Chuhg

AU - Wu, Yu Hen

PY - 2002/7/1

Y1 - 2002/7/1

N2 - A novel two-step hydrogen plasma treatment was applied to low-k a-C:F to passivate the chemical structures against thermal stress, and attack by oxygen during patterning processes. First, the hydrogen plasma treatment increased the thermal stability of a-C:F films. Hydrogen elements penetrated deeply into a-C:F films, providing an initial passivation against sequential damage caused by etching plasmas. Further hydrogen treatment could repair the damage caused by the etching of H2-treated a-C:F films.

AB - A novel two-step hydrogen plasma treatment was applied to low-k a-C:F to passivate the chemical structures against thermal stress, and attack by oxygen during patterning processes. First, the hydrogen plasma treatment increased the thermal stability of a-C:F films. Hydrogen elements penetrated deeply into a-C:F films, providing an initial passivation against sequential damage caused by etching plasmas. Further hydrogen treatment could repair the damage caused by the etching of H2-treated a-C:F films.

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U2 - 10.1116/1.1494067

DO - 10.1116/1.1494067

M3 - Conference article

AN - SCOPUS:0035982571

SN - 1071-1023

VL - 20

SP - 1476

EP - 1481

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

Y2 - 6 January 2002 through 10 January 2002

ER -

Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H₂ plasma treatment

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