Reduction of efficiency droop in InGaN light-emitting diode grown on self-separated freestanding GaN substrates

Chu Li Chao*, Rong Xuan, Hsi Hsuan Yen, Ching Hsueh Chiu, Yen Hsiang Fang, Zhen Yu Li, Bo Chun Chen, Chien-Chung Lin, Ching Hua Chiu, Yih Der Guo, Hao-Chung Kuo, Jenn-Fang Chen, Shun-Jen Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Using a GaN nanorod template in a hydride vapor phase epitaxy (HVPE) system can manufacture a freestanding GaN (FS-GaN) substrate with threading dislocation densities down to ∼ 10 7 cm -2 . In this letter, we report InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) grown on this FS-GaN substrate. The defect densities in the homoepitaxially grown LEDs were substantially reduced, leading to improved light emission efficiency. Compared with the LED grown on sapphire, we obtained a lower forward voltage, smaller diode ideality factor, and higher lightoutput power in the same structure grown on FS-GaN. The external quantum efficiency (EQE) of LEDs grown on FS-GaN were improved especially at high injection current, which brought the efficiency droop phenomenon greatly reduced at high current density.

Original languageEnglish
Article number5740304
Pages (from-to)798-800
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number12
DOIs
StatePublished - 15 Jun 2011

Keywords

  • Droop
  • freestanding GaN (FS-GaN)
  • homoepitaxially
  • light-emitting diodes (LEDs)

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