Abstract
Using a GaN nanorod template in a hydride vapor phase epitaxy (HVPE) system can manufacture a freestanding GaN (FS-GaN) substrate with threading dislocation densities down to ∼ 107 cm-2. In this letter, we report InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) grown on this FS-GaN substrate. The defect densities in the homoepitaxially grown LEDs were substantially reduced, leading to improved light emission efficiency. Compared with the LED grown on sapphire, we obtained a lower forward voltage, smaller diode ideality factor, and higher lightoutput power in the same structure grown on FS-GaN. The external quantum efficiency (EQE) of LEDs grown on FS-GaN were improved especially at high injection current, which brought the efficiency droop phenomenon greatly reduced at high current density.
Original language | English |
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Article number | 5740304 |
Pages (from-to) | 798-800 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 23 |
Issue number | 12 |
DOIs | |
State | Published - 15 Jun 2011 |
Keywords
- Droop
- freestanding GaN (FS-GaN)
- homoepitaxially
- light-emitting diodes (LEDs)