@inproceedings{b980656243a141bc88fc69c9b765b4e8,
title = "Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier",
abstract = "The UV LEDs with quaternary InAlGaN barrier exhibit higher radiative recombination rate and low efficiency droop at a high injection current because of the better band-offset ratio and the higher carrier mobility.",
author = "Chiu, {Ching Hsueh} and Tu, {Po Min} and Chang, {Chun Yen} and Huang, {Shih Cheng} and Chang, {Jet Rung} and Hsiao-Wen Zan and Hao-Chung Kuo and Hsu, {Chih Peng}",
year = "2011",
language = "English",
isbn = "9781612842882",
series = "16th Opto-Electronics and Communications Conference, OECC 2011",
pages = "733--734",
booktitle = "16th Opto-Electronics and Communications Conference, OECC 2011",
note = "16th Opto-Electronics and Communications Conference, OECC 2011 ; Conference date: 04-07-2011 Through 08-07-2011",
}