Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs

Leland Chang; Kevin J. Yang; Yee Chia Yeo; Yang Kyu Choi; Tsu Jae King; Chen-Ming Hu

doi:10.1109/IEDM.2001.979428

Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs

Leland Chang^*, Kevin J. Yang, Yee Chia Yeo, Yang Kyu Choi, Tsu Jae King, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

28 Scopus citations

Abstract

The impact of energy quantization on gate tunneling current is studied for double-gate and ultra-thin body MOSFETs. The lower vertical electric field in the channel of these thin-body devices causes a reduction in gate leakage by as much as an order of magnitude. The additional effects of channel doping and high-κ dielectrics are also investigated.

Original language	English
Pages (from-to)	99-102
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979428
State	Published - Dec 2001
Event	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2 Dec 2001 → 5 Dec 2001

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10.1109/IEDM.2001.979428

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title = "Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs",

abstract = "The impact of energy quantization on gate tunneling current is studied for double-gate and ultra-thin body MOSFETs. The lower vertical electric field in the channel of these thin-body devices causes a reduction in gate leakage by as much as an order of magnitude. The additional effects of channel doping and high-κ dielectrics are also investigated.",

author = "Leland Chang and Yang, {Kevin J.} and Yeo, {Yee Chia} and Choi, {Yang Kyu} and King, {Tsu Jae} and Chen-Ming Hu",

year = "2001",

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doi = "10.1109/IEDM.2001.979428",

language = "English",

pages = "99--102",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

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TY - JOUR

T1 - Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs

AU - Chang, Leland

AU - Yang, Kevin J.

AU - Yeo, Yee Chia

AU - Choi, Yang Kyu

AU - King, Tsu Jae

AU - Hu, Chen-Ming

PY - 2001/12

Y1 - 2001/12

N2 - The impact of energy quantization on gate tunneling current is studied for double-gate and ultra-thin body MOSFETs. The lower vertical electric field in the channel of these thin-body devices causes a reduction in gate leakage by as much as an order of magnitude. The additional effects of channel doping and high-κ dielectrics are also investigated.

AB - The impact of energy quantization on gate tunneling current is studied for double-gate and ultra-thin body MOSFETs. The lower vertical electric field in the channel of these thin-body devices causes a reduction in gate leakage by as much as an order of magnitude. The additional effects of channel doping and high-κ dielectrics are also investigated.

UR - http://www.scopus.com/inward/record.url?scp=0035714771&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2001.979428

DO - 10.1109/IEDM.2001.979428

M3 - Conference article

AN - SCOPUS:0035714771

SN - 0163-1918

SP - 99

EP - 102

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -

Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs

Abstract

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