@inproceedings{b642559c6fd54b4bbc2d5c89b4d6e719,
title = "Reducing Ni residues of metal induced crystallization poly-Si with a simple chemical oxide layer",
abstract = "The high leakage current is the most important issue of MIC-TFT. Ni residues in the MIC-TFT is the major cause of the leakage. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into a-Si layer during MIC process. The process is simple and without extra thermal annealing. It was found that the Ni concentration of poly-Si film with chemical oxide layer was much less than that of conventional MIC poly-Si film. As a result, the leakage current was improved.",
author = "Lai, {Ming Hui} and Yew-Chuhg Wu",
year = "2010",
month = dec,
day = "1",
doi = "10.1149/1.3481230",
language = "English",
isbn = "9781566778244",
series = "ECS Transactions",
number = "5",
pages = "157--159",
booktitle = "Thin Film Transistors 10, TFT 10",
edition = "5",
note = "10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting ; Conference date: 11-10-2010 Through 15-10-2010",
}