Reduced temperature-quenching of photoluminescence from indium nitride nanotips grown by metalorganic chemical vapor deposition

Shih Chen Shi; Chia Fu Chen; Geng Ming Hsu; Jih Shang Hwang; Surojit Chattopadhyay; Zon Huang Lan; Kuei Hsien Chen; Li Chyong Chen

doi:10.1063/1.2128484

Reduced temperature-quenching of photoluminescence from indium nitride nanotips grown by metalorganic chemical vapor deposition

Shih Chen Shi, Chia Fu Chen, Geng Ming Hsu, Jih Shang Hwang, Surojit Chattopadhyay, Zon Huang Lan, Kuei Hsien Chen, Li Chyong Chen^*

^*Corresponding author for this work

Institute of Biophotonics

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We report metalorganic chemical vapor deposition of indium nitride (InN) nanotips with apex angles of 10° and length and base diameter of around 1 μm and 200 nm, respectively. The structure of the hexagonal InN nanotips growing along [002] was studied by electron microscopy and x-ray diffraction, and the optical properties were studied using temperature-dependent photoluminescence (PL) measurements. A narrow emission peak with a 18 meV full width at half maximum positioned at 0.77 eV was obtained with no visible emission. A PL quenching of only 14% was observed with a temperature scan of 15-320 K.

Original language	English
Article number	203103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	20
DOIs	https://doi.org/10.1063/1.2128484
State	Published - 14 Nov 2005

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@article{85f0ed1fc68c4c81b44137d07b596ae1,

title = "Reduced temperature-quenching of photoluminescence from indium nitride nanotips grown by metalorganic chemical vapor deposition",

abstract = "We report metalorganic chemical vapor deposition of indium nitride (InN) nanotips with apex angles of 10° and length and base diameter of around 1 μm and 200 nm, respectively. The structure of the hexagonal InN nanotips growing along [002] was studied by electron microscopy and x-ray diffraction, and the optical properties were studied using temperature-dependent photoluminescence (PL) measurements. A narrow emission peak with a 18 meV full width at half maximum positioned at 0.77 eV was obtained with no visible emission. A PL quenching of only 14% was observed with a temperature scan of 15-320 K.",

author = "Shi, {Shih Chen} and Chen, {Chia Fu} and Hsu, {Geng Ming} and Hwang, {Jih Shang} and Surojit Chattopadhyay and Lan, {Zon Huang} and Chen, {Kuei Hsien} and Chen, {Li Chyong}",

note = "Funding Information: Support from Academia Sinica, NSC and MOE, Taiwan, and the U.S. Air Force of Scientific Research/Asian Office of Aerospace Research and Development is gratefully acknowledged. The authors thank Professor Y. F. Chen, National Taiwan University, for useful discussion and the use of the IR-PL setup. ",

year = "2005",

month = nov,

day = "14",

doi = "10.1063/1.2128484",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Reduced temperature-quenching of photoluminescence from indium nitride nanotips grown by metalorganic chemical vapor deposition

AU - Shi, Shih Chen

AU - Chen, Chia Fu

AU - Hsu, Geng Ming

AU - Hwang, Jih Shang

AU - Chattopadhyay, Surojit

AU - Lan, Zon Huang

AU - Chen, Kuei Hsien

AU - Chen, Li Chyong

N1 - Funding Information: Support from Academia Sinica, NSC and MOE, Taiwan, and the U.S. Air Force of Scientific Research/Asian Office of Aerospace Research and Development is gratefully acknowledged. The authors thank Professor Y. F. Chen, National Taiwan University, for useful discussion and the use of the IR-PL setup.

PY - 2005/11/14

Y1 - 2005/11/14

N2 - We report metalorganic chemical vapor deposition of indium nitride (InN) nanotips with apex angles of 10° and length and base diameter of around 1 μm and 200 nm, respectively. The structure of the hexagonal InN nanotips growing along [002] was studied by electron microscopy and x-ray diffraction, and the optical properties were studied using temperature-dependent photoluminescence (PL) measurements. A narrow emission peak with a 18 meV full width at half maximum positioned at 0.77 eV was obtained with no visible emission. A PL quenching of only 14% was observed with a temperature scan of 15-320 K.

AB - We report metalorganic chemical vapor deposition of indium nitride (InN) nanotips with apex angles of 10° and length and base diameter of around 1 μm and 200 nm, respectively. The structure of the hexagonal InN nanotips growing along [002] was studied by electron microscopy and x-ray diffraction, and the optical properties were studied using temperature-dependent photoluminescence (PL) measurements. A narrow emission peak with a 18 meV full width at half maximum positioned at 0.77 eV was obtained with no visible emission. A PL quenching of only 14% was observed with a temperature scan of 15-320 K.

UR - http://www.scopus.com/inward/record.url?scp=27744517967&partnerID=8YFLogxK

U2 - 10.1063/1.2128484

DO - 10.1063/1.2128484

M3 - Article

AN - SCOPUS:27744517967

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203103

ER -

Reduced temperature-quenching of photoluminescence from indium nitride nanotips grown by metalorganic chemical vapor deposition

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