Reduced Switching Current with a Light Metal in a Tri-layer Spin-orbit Torque Device

Yu Hui Wu, Chih Wei Cheng, Yu Lon Lin, Min Cheng Chen, Yuan Chieh Tseng*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The use of a tri-layer structure and light metals have each received much research attention in spin-orbit torque (SOT) technology. We combine these two approaches by placing an ultra-thin (1 nm) Cu adjacent to the bottom ferromagnetic layer in a tri-layer SOT device. This can reduce the switching current by ∼30% compared to the conventional bi-layer device due to enhanced SOT efficiency. This advantage is more obvious under a unipolar condition and it is attributed to a slightly asymmetric interface caused by the Cu insertion. By magneto-optical Kerr effect microscopy, we also observe a domain reversal mechanism distinct from the bi-layer case.

Original languageEnglish
Title of host publication2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350338362
DOIs
StatePublished - 2023
Event2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Sendai, Japan
Duration: 15 May 202319 May 2023

Publication series

Name2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings

Conference

Conference2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023
Country/TerritoryJapan
CitySendai
Period15/05/2319/05/23

Keywords

  • light-metal
  • magneto-optical Kerr effect
  • MRAM
  • spin-orbit torque
  • tri-layer

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