Reduced Reverse Narrow Channel Effect in Thin SOI nMOSFETs

Chun Yen Chang; Sun Jay Chang; Tien-Sheng Chao; Sung Dtr Wu; Tiao Yuan Huang

doi:10.1109/55.863111

Reduced Reverse Narrow Channel Effect in Thin SOI nMOSFETs

Chun Yen Chang, Sun Jay Chang, Tien-Sheng Chao, Sung Dtr Wu, Tiao Yuan Huang

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The effects of narrow channel width on the threshold voltage of deep submicron silicon-on-insulator (SOI) nMOSFETs with LOCOS isolation have been investigated. The reverse narrow channel effect (RNCE) in SOI devices is found to be dependent on the thickness of the active silicon film. A thinner silicon film is found to depict less threshold voltage fall-off. These results can be explained by a reduced oxide/silicon interface area in the transistor width direction, thus the boron segregation due to silicon interstitials with high recombination rate is reduced.

Original language	English
Pages (from-to)	460-462
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	9
DOIs	https://doi.org/10.1109/55.863111
State	Published - 1 Sep 2000

Keywords

Reverse narrow channel effect (RNCE)
silicon-on-insulator (SOI)

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10.1109/55.863111

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title = "Reduced Reverse Narrow Channel Effect in Thin SOI nMOSFETs",

abstract = "The effects of narrow channel width on the threshold voltage of deep submicron silicon-on-insulator (SOI) nMOSFETs with LOCOS isolation have been investigated. The reverse narrow channel effect (RNCE) in SOI devices is found to be dependent on the thickness of the active silicon film. A thinner silicon film is found to depict less threshold voltage fall-off. These results can be explained by a reduced oxide/silicon interface area in the transistor width direction, thus the boron segregation due to silicon interstitials with high recombination rate is reduced.",

keywords = "Reverse narrow channel effect (RNCE), silicon-on-insulator (SOI)",

author = "Chang, {Chun Yen} and Chang, {Sun Jay} and Tien-Sheng Chao and Wu, {Sung Dtr} and Huang, {Tiao Yuan}",

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AU - Chang, Chun Yen

AU - Chang, Sun Jay

AU - Chao, Tien-Sheng

AU - Wu, Sung Dtr

AU - Huang, Tiao Yuan

PY - 2000/9/1

Y1 - 2000/9/1

N2 - The effects of narrow channel width on the threshold voltage of deep submicron silicon-on-insulator (SOI) nMOSFETs with LOCOS isolation have been investigated. The reverse narrow channel effect (RNCE) in SOI devices is found to be dependent on the thickness of the active silicon film. A thinner silicon film is found to depict less threshold voltage fall-off. These results can be explained by a reduced oxide/silicon interface area in the transistor width direction, thus the boron segregation due to silicon interstitials with high recombination rate is reduced.

AB - The effects of narrow channel width on the threshold voltage of deep submicron silicon-on-insulator (SOI) nMOSFETs with LOCOS isolation have been investigated. The reverse narrow channel effect (RNCE) in SOI devices is found to be dependent on the thickness of the active silicon film. A thinner silicon film is found to depict less threshold voltage fall-off. These results can be explained by a reduced oxide/silicon interface area in the transistor width direction, thus the boron segregation due to silicon interstitials with high recombination rate is reduced.

KW - Reverse narrow channel effect (RNCE)

KW - silicon-on-insulator (SOI)

UR - http://www.scopus.com/inward/record.url?scp=85008057839&partnerID=8YFLogxK

U2 - 10.1109/55.863111

DO - 10.1109/55.863111

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AN - SCOPUS:0034259590

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VL - 21

SP - 460

EP - 462

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Reduced Reverse Narrow Channel Effect in Thin SOI nMOSFETs

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