Reduced parasitic contact resistance and highly stable operation in a-In-Ga-Zn-O thin-film transistors with microwave treatment

Po-Tsun Liu; Chih Hsiang Chang; Guang Ting Zheng; Chur Shyang Fuh; Li Feng Teng; Meng Chyi Wu; Yao Jen Lee

doi:10.1016/j.tsf.2016.11.007

Reduced parasitic contact resistance and highly stable operation in a-In-Ga-Zn-O thin-film transistors with microwave treatment

Po-Tsun Liu^*, Chih Hsiang Chang, Guang Ting Zheng, Chur Shyang Fuh, Li Feng Teng, Meng Chyi Wu, Yao Jen Lee

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this work, we studied the effects of microwave annealing process on amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and demonstrated a high performance and reliable device characteristics. The characteristic trapping time (τ) derived from stretched-exponential model was extracted to exhibit the quality improvement of a-IGZO thin film. The microwave annealing features a selective heating and potentially avoids the damage to materials neighboring the a-IGZO channel layer in TFT device structure during thermal processes, resulting in lower parasitic source to drain resistance.

Original language	English
Pages (from-to)	148-152
Number of pages	5
Journal	Thin Solid Films
Volume	619
DOIs	https://doi.org/10.1016/j.tsf.2016.11.007
State	Published - 30 Nov 2016

Keywords

Amorphous indium gallium zinc oxide
Metal oxide thin film transistor
Microwave annealing
Source-drain resistance

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10.1016/j.tsf.2016.11.007

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title = "Reduced parasitic contact resistance and highly stable operation in a-In-Ga-Zn-O thin-film transistors with microwave treatment",

abstract = "In this work, we studied the effects of microwave annealing process on amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and demonstrated a high performance and reliable device characteristics. The characteristic trapping time (τ) derived from stretched-exponential model was extracted to exhibit the quality improvement of a-IGZO thin film. The microwave annealing features a selective heating and potentially avoids the damage to materials neighboring the a-IGZO channel layer in TFT device structure during thermal processes, resulting in lower parasitic source to drain resistance.",

keywords = "Amorphous indium gallium zinc oxide, Metal oxide thin film transistor, Microwave annealing, Source-drain resistance",

author = "Po-Tsun Liu and Chang, {Chih Hsiang} and Zheng, {Guang Ting} and Fuh, {Chur Shyang} and Teng, {Li Feng} and Wu, {Meng Chyi} and Lee, {Yao Jen}",

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doi = "10.1016/j.tsf.2016.11.007",

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TY - JOUR

T1 - Reduced parasitic contact resistance and highly stable operation in a-In-Ga-Zn-O thin-film transistors with microwave treatment

AU - Liu, Po-Tsun

AU - Chang, Chih Hsiang

AU - Zheng, Guang Ting

AU - Fuh, Chur Shyang

AU - Teng, Li Feng

AU - Wu, Meng Chyi

AU - Lee, Yao Jen

PY - 2016/11/30

Y1 - 2016/11/30

N2 - In this work, we studied the effects of microwave annealing process on amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and demonstrated a high performance and reliable device characteristics. The characteristic trapping time (τ) derived from stretched-exponential model was extracted to exhibit the quality improvement of a-IGZO thin film. The microwave annealing features a selective heating and potentially avoids the damage to materials neighboring the a-IGZO channel layer in TFT device structure during thermal processes, resulting in lower parasitic source to drain resistance.

AB - In this work, we studied the effects of microwave annealing process on amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and demonstrated a high performance and reliable device characteristics. The characteristic trapping time (τ) derived from stretched-exponential model was extracted to exhibit the quality improvement of a-IGZO thin film. The microwave annealing features a selective heating and potentially avoids the damage to materials neighboring the a-IGZO channel layer in TFT device structure during thermal processes, resulting in lower parasitic source to drain resistance.

KW - Amorphous indium gallium zinc oxide

KW - Metal oxide thin film transistor

KW - Microwave annealing

KW - Source-drain resistance

UR - http://www.scopus.com/inward/record.url?scp=84997701141&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2016.11.007

DO - 10.1016/j.tsf.2016.11.007

M3 - Article

AN - SCOPUS:84997701141

SN - 0040-6090

VL - 619

SP - 148

EP - 152

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Reduced parasitic contact resistance and highly stable operation in a-In-Ga-Zn-O thin-film transistors with microwave treatment

Abstract

Keywords

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