Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n+/p Shallow Junction

Yi Ju Chen; Bing-Yue Tsui; Hung Ju Chou; Ching I. Li; Ger Pin Lin; Shao Yu Hu

doi:10.1109/LED.2017.2726086

Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n⁺/p Shallow Junction

Yi Ju Chen, Bing-Yue Tsui^*, Hung Ju Chou, Ching I. Li, Ger Pin Lin, Shao Yu Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Effects of hot phosphorus (P) implantation on the NiGe-contacted Ge n⁺/p junction are studied in this work. At an adequately high ion-implantation temperature (150°C), the P depth profiles of the hot-implanted samples are similar to that of the room-temperature implanted ones. Hot P implantation is demonstrated effectively in reducing ion implantation induced defect formation and suppressing nickel atoms diffusion. Therefore, hot P implantation is efficient in lowering junction leakage and excellent junction characteristics exhibiting \sim 1\times 10^{6}~{J}-{ \mathrm{\scriptscriptstyle ON}}/{J}-{ \mathrm{\scriptscriptstyle OFF}} ratio is achieved.

Original language	English
Article number	7976289
Pages (from-to)	1192-1195
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	38
Issue number	9
DOIs	https://doi.org/10.1109/LED.2017.2726086
State	Published - Sep 2017

Keywords

Germanium
hot implantation
junction
phosphorus

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10.1109/LED.2017.2726086

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@article{0280bfd2afd04d4db908f70f9eb0d992,

title = "Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n+/p Shallow Junction",

abstract = "Effects of hot phosphorus (P) implantation on the NiGe-contacted Ge n+/p junction are studied in this work. At an adequately high ion-implantation temperature (150°C), the P depth profiles of the hot-implanted samples are similar to that of the room-temperature implanted ones. Hot P implantation is demonstrated effectively in reducing ion implantation induced defect formation and suppressing nickel atoms diffusion. Therefore, hot P implantation is efficient in lowering junction leakage and excellent junction characteristics exhibiting \sim 1\times 10^{6}~{J}-{ \mathrm{\scriptscriptstyle ON}}/{J}-{ \mathrm{\scriptscriptstyle OFF}} ratio is achieved.",

keywords = "Germanium, hot implantation, junction, phosphorus",

author = "Chen, {Yi Ju} and Bing-Yue Tsui and Chou, {Hung Ju} and Li, {Ching I.} and Lin, {Ger Pin} and Hu, {Shao Yu}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2017",

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doi = "10.1109/LED.2017.2726086",

language = "English",

volume = "38",

pages = "1192--1195",

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T1 - Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n+/p Shallow Junction

AU - Chen, Yi Ju

AU - Tsui, Bing-Yue

AU - Chou, Hung Ju

AU - Li, Ching I.

AU - Lin, Ger Pin

AU - Hu, Shao Yu

PY - 2017/9

Y1 - 2017/9

N2 - Effects of hot phosphorus (P) implantation on the NiGe-contacted Ge n+/p junction are studied in this work. At an adequately high ion-implantation temperature (150°C), the P depth profiles of the hot-implanted samples are similar to that of the room-temperature implanted ones. Hot P implantation is demonstrated effectively in reducing ion implantation induced defect formation and suppressing nickel atoms diffusion. Therefore, hot P implantation is efficient in lowering junction leakage and excellent junction characteristics exhibiting \sim 1\times 10^{6}~{J}-{ \mathrm{\scriptscriptstyle ON}}/{J}-{ \mathrm{\scriptscriptstyle OFF}} ratio is achieved.

AB - Effects of hot phosphorus (P) implantation on the NiGe-contacted Ge n+/p junction are studied in this work. At an adequately high ion-implantation temperature (150°C), the P depth profiles of the hot-implanted samples are similar to that of the room-temperature implanted ones. Hot P implantation is demonstrated effectively in reducing ion implantation induced defect formation and suppressing nickel atoms diffusion. Therefore, hot P implantation is efficient in lowering junction leakage and excellent junction characteristics exhibiting \sim 1\times 10^{6}~{J}-{ \mathrm{\scriptscriptstyle ON}}/{J}-{ \mathrm{\scriptscriptstyle OFF}} ratio is achieved.

KW - Germanium

KW - hot implantation

KW - junction

KW - phosphorus

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U2 - 10.1109/LED.2017.2726086

DO - 10.1109/LED.2017.2726086

M3 - Article

AN - SCOPUS:85023593579

SN - 0741-3106

VL - 38

SP - 1192

EP - 1195

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 9

M1 - 7976289

ER -

Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n⁺/p Shallow Junction

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