TY - GEN
T1 - Record low specific contact resistivity (1.2×10-9 Ω-cm2) for P-type semiconductors
T2 - 37th Symposium on VLSI Technology, VLSI Technology 2017
AU - Wu, Ying
AU - Luo, Sheng
AU - Wang, Wei
AU - Masudy-Panah, Saeid
AU - Lei, Dian
AU - Gong, Xiao
AU - Liang, Gengchiau
AU - Yeo, Yee Chia
N1 - Publisher Copyright:
© 2017 JSAP.
PY - 2017/7/31
Y1 - 2017/7/31
N2 - Record-low specific contact resistivity ρc down to 1.2×10-9 Ω-cm2 is achieved for Ti/p+-Ge0.95Sn0.05 contact by incorporating Sn into Ge and insitu Ga doping with active doping concentration of 1.6×1020 cm-3. As compared with Ni(GeSn)/p+-Ge0.95Sn0.05 contact, Ti/p+-Ge0.95Sn0.05 contact exhibits lower ρc and is more thermally stable. In addition, theoretical calculation shows that for a given doping concentration, incorporating Sn into Ge lowers the pc as compared with metal/p-Ge contacts.
AB - Record-low specific contact resistivity ρc down to 1.2×10-9 Ω-cm2 is achieved for Ti/p+-Ge0.95Sn0.05 contact by incorporating Sn into Ge and insitu Ga doping with active doping concentration of 1.6×1020 cm-3. As compared with Ni(GeSn)/p+-Ge0.95Sn0.05 contact, Ti/p+-Ge0.95Sn0.05 contact exhibits lower ρc and is more thermally stable. In addition, theoretical calculation shows that for a given doping concentration, incorporating Sn into Ge lowers the pc as compared with metal/p-Ge contacts.
UR - http://www.scopus.com/inward/record.url?scp=85028040456&partnerID=8YFLogxK
U2 - 10.23919/VLSIT.2017.7998178
DO - 10.23919/VLSIT.2017.7998178
M3 - Conference contribution
AN - SCOPUS:85028040456
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - T218-T219
BT - 2017 Symposium on VLSI Technology, VLSI Technology 2017
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 5 June 2017 through 8 June 2017
ER -