Record low specific contact resistivity (1.2×10-9 Ω-cm2) for P-type semiconductors: Incorporation of Sn into Ge and in-Situ Ga doping

Ying Wu, Sheng Luo, Wei Wang, Saeid Masudy-Panah, Dian Lei, Xiao Gong, Gengchiau Liang, Yee Chia Yeo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

13 Scopus citations

Abstract

Record-low specific contact resistivity ρc down to 1.2×10-9 Ω-cm2 is achieved for Ti/p+-Ge0.95Sn0.05 contact by incorporating Sn into Ge and insitu Ga doping with active doping concentration of 1.6×1020 cm-3. As compared with Ni(GeSn)/p+-Ge0.95Sn0.05 contact, Ti/p+-Ge0.95Sn0.05 contact exhibits lower ρc and is more thermally stable. In addition, theoretical calculation shows that for a given doping concentration, incorporating Sn into Ge lowers the pc as compared with metal/p-Ge contacts.

Original languageEnglish
Title of host publication2017 Symposium on VLSI Technology, VLSI Technology 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT218-T219
ISBN (Electronic)9784863486058
DOIs
StatePublished - 31 Jul 2017
Event37th Symposium on VLSI Technology, VLSI Technology 2017 - Kyoto, Japan
Duration: 5 Jun 20178 Jun 2017

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference37th Symposium on VLSI Technology, VLSI Technology 2017
Country/TerritoryJapan
CityKyoto
Period5/06/178/06/17

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