Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics

Dong Ru Hsieh; Jia Chian Ni; Wei Ju Yeh; Tzu Chieh Hong; Zi Yang Hong; Yan Kui Liang; Huai En Luo; Michael Hsu; Ta Chun Cho; Tien Sheng Chao

doi:10.23919/SNW57900.2023.10183943

Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics

Dong Ru Hsieh, Jia Chian Ni, Wei Ju Yeh, Tzu Chieh Hong, Zi Yang Hong, Yan Kui Liang, Huai En Luo, Michael Hsu, Ta Chun Cho, Tien Sheng Chao^*

^*Corresponding author for this work

Degree Program of Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A 5-nm-thick HfO2 anti-fuse one-time programmable (OTP) memory achieving a record-high pulsed memory window (MW) of 2.1× 108 at a low read voltage (Vread) of 1 V have been proposed and demonstrated for the first time. Furthermore, the HfO2 OTP memory shows a robust 25°C retention with an extremely stable pulsed MW > 2× 108 after 107 s. From the pulsed characteristics and reliability viewpoints, the HfO2 OTP memory is a very suitable candidate for the Internet of Things (IoTs) applications and automotive (ATV) security integrated circuits (ICs).

Original language	English
Title of host publication	2023 Silicon Nanoelectronics Workshop, SNW 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	113-114
Number of pages	2
ISBN (Electronic)	9784863488083
DOIs	https://doi.org/10.23919/SNW57900.2023.10183943
State	Published - 2023
Event	26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan Duration: 11 Jun 2023 → 12 Jun 2023

Publication series

Name	2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference	26th Silicon Nanoelectronics Workshop, SNW 2023
Country/Territory	Japan
City	Kyoto
Period	11/06/23 → 12/06/23

Access to Document

10.23919/SNW57900.2023.10183943

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Hsieh, D. R., Ni, J. C., Yeh, W. J., Hong, T. C., Hong, Z. Y., Liang, Y. K., Luo, H. E., Hsu, M., Cho, T. C., & Chao, T. S. (2023). Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics. In 2023 Silicon Nanoelectronics Workshop, SNW 2023 (pp. 113-114). (2023 Silicon Nanoelectronics Workshop, SNW 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW57900.2023.10183943

@inproceedings{fe15c504aab140b6b44c4b0c7a6c3bbb,

title = "Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics",

abstract = "A 5-nm-thick HfO2 anti-fuse one-time programmable (OTP) memory achieving a record-high pulsed memory window (MW) of 2.1× 108 at a low read voltage (Vread) of 1 V have been proposed and demonstrated for the first time. Furthermore, the HfO2 OTP memory shows a robust 25°C retention with an extremely stable pulsed MW > 2× 108 after 107 s. From the pulsed characteristics and reliability viewpoints, the HfO2 OTP memory is a very suitable candidate for the Internet of Things (IoTs) applications and automotive (ATV) security integrated circuits (ICs).",

author = "Hsieh, {Dong Ru} and Ni, {Jia Chian} and Yeh, {Wei Ju} and Hong, {Tzu Chieh} and Hong, {Zi Yang} and Liang, {Yan Kui} and Luo, {Huai En} and Michael Hsu and Cho, {Ta Chun} and Chao, {Tien Sheng}",

note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 26th Silicon Nanoelectronics Workshop, SNW 2023 ; Conference date: 11-06-2023 Through 12-06-2023",

year = "2023",

doi = "10.23919/SNW57900.2023.10183943",

language = "English",

series = "2023 Silicon Nanoelectronics Workshop, SNW 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "113--114",

booktitle = "2023 Silicon Nanoelectronics Workshop, SNW 2023",

address = "美國",

}

Hsieh, DR, Ni, JC, Yeh, WJ, Hong, TC, Hong, ZY, Liang, YK, Luo, HE, Hsu, M, Cho, TC & Chao, TS 2023, Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics. in 2023 Silicon Nanoelectronics Workshop, SNW 2023. 2023 Silicon Nanoelectronics Workshop, SNW 2023, Institute of Electrical and Electronics Engineers Inc., pp. 113-114, 26th Silicon Nanoelectronics Workshop, SNW 2023, Kyoto, Japan, 11/06/23. https://doi.org/10.23919/SNW57900.2023.10183943

Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics. / Hsieh, Dong Ru; Ni, Jia Chian; Yeh, Wei Ju et al.
2023 Silicon Nanoelectronics Workshop, SNW 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 113-114 (2023 Silicon Nanoelectronics Workshop, SNW 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory

T2 - 26th Silicon Nanoelectronics Workshop, SNW 2023

AU - Hsieh, Dong Ru

AU - Ni, Jia Chian

AU - Yeh, Wei Ju

AU - Hong, Tzu Chieh

AU - Hong, Zi Yang

AU - Liang, Yan Kui

AU - Luo, Huai En

AU - Hsu, Michael

AU - Cho, Ta Chun

AU - Chao, Tien Sheng

PY - 2023

Y1 - 2023

N2 - A 5-nm-thick HfO2 anti-fuse one-time programmable (OTP) memory achieving a record-high pulsed memory window (MW) of 2.1× 108 at a low read voltage (Vread) of 1 V have been proposed and demonstrated for the first time. Furthermore, the HfO2 OTP memory shows a robust 25°C retention with an extremely stable pulsed MW > 2× 108 after 107 s. From the pulsed characteristics and reliability viewpoints, the HfO2 OTP memory is a very suitable candidate for the Internet of Things (IoTs) applications and automotive (ATV) security integrated circuits (ICs).

AB - A 5-nm-thick HfO2 anti-fuse one-time programmable (OTP) memory achieving a record-high pulsed memory window (MW) of 2.1× 108 at a low read voltage (Vread) of 1 V have been proposed and demonstrated for the first time. Furthermore, the HfO2 OTP memory shows a robust 25°C retention with an extremely stable pulsed MW > 2× 108 after 107 s. From the pulsed characteristics and reliability viewpoints, the HfO2 OTP memory is a very suitable candidate for the Internet of Things (IoTs) applications and automotive (ATV) security integrated circuits (ICs).

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U2 - 10.23919/SNW57900.2023.10183943

DO - 10.23919/SNW57900.2023.10183943

M3 - Conference contribution

AN - SCOPUS:85167408445

T3 - 2023 Silicon Nanoelectronics Workshop, SNW 2023

SP - 113

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BT - 2023 Silicon Nanoelectronics Workshop, SNW 2023

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 11 June 2023 through 12 June 2023

ER -

Hsieh DR, Ni JC, Yeh WJ, Hong TC, Hong ZY, Liang YK et al. Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics. In 2023 Silicon Nanoelectronics Workshop, SNW 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 113-114. (2023 Silicon Nanoelectronics Workshop, SNW 2023). doi: 10.23919/SNW57900.2023.10183943

Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics

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