Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10-10Ω-cm2ρcfrom Cryogenic (5 K) to Room Temperature

Gerui Zheng*, Yuxuan Wang, Haiwen Xu, Rami Khazaka, Lutz Muehlenbein, Sheng Luo, Xuanqi Chen, Rui Shao, Zijie Zheng, Gengchiau Liang, Xiao Gong*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report the first demonstration of active boron (B) doping concentration (NA) higher than 2.50 × 1021 cm-3 in high Ge content (> 65%) Si1-x Gex using In-situ growth technique with a low temperature below 500 °C. We achieve excellent uniformities of Si1-x Gex thickness and resistivity across the entire 300 mm wafer and obtain an ultra-low as-deposited specific contact resistivity (ρc) down to 2.9 ± 2.8 × 10-10 Ω-cm2 on the sample with a high average active doping concentration (NA) of 2.80 × 1021cm-3 and Ge composition of 65%. We further detail the progression of the selective growth of such Si1 · x Gex film on advanced 3D structures. Using metal Si 1-x Gex ladder TLM (LTLM) structures, we investigate the contact properties from room temperature to cryogenic temperatures as low as 5 K, disclosing for the first time the insignificant change of ρc at such ultra-low ρc regimes.

Original languageEnglish
Title of host publication2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863488069
DOIs
StatePublished - 2023
Event2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, Japan
Duration: 11 Jun 202316 Jun 2023

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2023-June
ISSN (Print)0743-1562

Conference

Conference2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
Country/TerritoryJapan
CityKyoto
Period11/06/2316/06/23

Keywords

  • cryo-temperature
  • In-situ doping
  • SiGe
  • specific contact resistivity

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