Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10-10Ω-cm2ρcfrom Cryogenic (5 K) to Room Temperature

Gerui Zheng; Yuxuan Wang; Haiwen Xu; Rami Khazaka; Lutz Muehlenbein; Sheng Luo; Xuanqi Chen; Rui Shao; Zijie Zheng; Gengchiau Liang; Xiao Gong

doi:10.23919/VLSITechnologyandCir57934.2023.10185320

Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10^-10Ω-cm²ρ_cfrom Cryogenic (5 K) to Room Temperature

Gerui Zheng^*, Yuxuan Wang, Haiwen Xu, Rami Khazaka, Lutz Muehlenbein, Sheng Luo, Xuanqi Chen, Rui Shao, Zijie Zheng, Gengchiau Liang, Xiao Gong^*

^*Corresponding author for this work

Institute of Pioneer Semiconductor Innovation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We report the first demonstration of active boron (B) doping concentration (NA) higher than 2.50 × 1021 cm-3 in high Ge content (> 65%) Si1-x Gex using In-situ growth technique with a low temperature below 500 °C. We achieve excellent uniformities of Si1-x Gex thickness and resistivity across the entire 300 mm wafer and obtain an ultra-low as-deposited specific contact resistivity (ρc) down to 2.9 ± 2.8 × 10-10 Ω-cm2 on the sample with a high average active doping concentration (NA) of 2.80 × 1021cm-3 and Ge composition of 65%. We further detail the progression of the selective growth of such Si1 · x Gex film on advanced 3D structures. Using metal Si 1-x Gex ladder TLM (LTLM) structures, we investigate the contact properties from room temperature to cryogenic temperatures as low as 5 K, disclosing for the first time the insignificant change of ρc at such ultra-low ρc regimes.

Original language	English
Title of host publication	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784863488069
DOIs	https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185320
State	Published - 2023
Event	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, Japan Duration: 11 Jun 2023 → 16 Jun 2023

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2023-June
ISSN (Print)	0743-1562

Conference

Conference	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
Country/Territory	Japan
City	Kyoto
Period	11/06/23 → 16/06/23

Keywords

In-situ doping
SiGe
cryo-temperature
specific contact resistivity

Access to Document

10.23919/VLSITechnologyandCir57934.2023.10185320

Cite this

Zheng, G., Wang, Y., Xu, H., Khazaka, R., Muehlenbein, L., Luo, S., Chen, X., Shao, R., Zheng, Z., Liang, G., & Gong, X. (2023). Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10^-10Ω-cm²ρ_cfrom Cryogenic (5 K) to Room Temperature. In 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2023-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185320

Zheng, Gerui ; Wang, Yuxuan ; Xu, Haiwen et al. / Record High Active Boron Doping using Low Temperature In-situ CVD : Enabling Sub-5×10^-10Ω-cm²ρ_cfrom Cryogenic (5 K) to Room Temperature. 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{c8269de94b4c423fb418c4a482b6810c,

title = "Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10-10Ω-cm2ρcfrom Cryogenic (5 K) to Room Temperature",

abstract = "We report the first demonstration of active boron (B) doping concentration (NA) higher than 2.50 × 1021 cm-3 in high Ge content (> 65%) Si1-x Gex using In-situ growth technique with a low temperature below 500 °C. We achieve excellent uniformities of Si1-x Gex thickness and resistivity across the entire 300 mm wafer and obtain an ultra-low as-deposited specific contact resistivity (ρc) down to 2.9 ± 2.8 × 10-10 Ω-cm2 on the sample with a high average active doping concentration (NA) of 2.80 × 1021cm-3 and Ge composition of 65%. We further detail the progression of the selective growth of such Si1 · x Gex film on advanced 3D structures. Using metal Si 1-x Gex ladder TLM (LTLM) structures, we investigate the contact properties from room temperature to cryogenic temperatures as low as 5 K, disclosing for the first time the insignificant change of ρc at such ultra-low ρc regimes.",

keywords = "In-situ doping, SiGe, cryo-temperature, specific contact resistivity",

author = "Gerui Zheng and Yuxuan Wang and Haiwen Xu and Rami Khazaka and Lutz Muehlenbein and Sheng Luo and Xuanqi Chen and Rui Shao and Zijie Zheng and Gengchiau Liang and Xiao Gong",

note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 ; Conference date: 11-06-2023 Through 16-06-2023",

year = "2023",

doi = "10.23919/VLSITechnologyandCir57934.2023.10185320",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023",

address = "美國",

}

Zheng, G, Wang, Y, Xu, H, Khazaka, R, Muehlenbein, L, Luo, S, Chen, X, Shao, R, Zheng, Z, Liang, G & Gong, X 2023, Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10^-10Ω-cm²ρ_cfrom Cryogenic (5 K) to Room Temperature. in 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Digest of Technical Papers - Symposium on VLSI Technology, vol. 2023-June, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023, Kyoto, Japan, 11/06/23. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185320

Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10^-10Ω-cm²ρ_cfrom Cryogenic (5 K) to Room Temperature. / Zheng, Gerui; Wang, Yuxuan; Xu, Haiwen et al.
2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2023-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Record High Active Boron Doping using Low Temperature In-situ CVD

T2 - 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023

AU - Zheng, Gerui

AU - Wang, Yuxuan

AU - Xu, Haiwen

AU - Khazaka, Rami

AU - Muehlenbein, Lutz

AU - Luo, Sheng

AU - Chen, Xuanqi

AU - Shao, Rui

AU - Zheng, Zijie

AU - Liang, Gengchiau

AU - Gong, Xiao

PY - 2023

Y1 - 2023

N2 - We report the first demonstration of active boron (B) doping concentration (NA) higher than 2.50 × 1021 cm-3 in high Ge content (> 65%) Si1-x Gex using In-situ growth technique with a low temperature below 500 °C. We achieve excellent uniformities of Si1-x Gex thickness and resistivity across the entire 300 mm wafer and obtain an ultra-low as-deposited specific contact resistivity (ρc) down to 2.9 ± 2.8 × 10-10 Ω-cm2 on the sample with a high average active doping concentration (NA) of 2.80 × 1021cm-3 and Ge composition of 65%. We further detail the progression of the selective growth of such Si1 · x Gex film on advanced 3D structures. Using metal Si 1-x Gex ladder TLM (LTLM) structures, we investigate the contact properties from room temperature to cryogenic temperatures as low as 5 K, disclosing for the first time the insignificant change of ρc at such ultra-low ρc regimes.

AB - We report the first demonstration of active boron (B) doping concentration (NA) higher than 2.50 × 1021 cm-3 in high Ge content (> 65%) Si1-x Gex using In-situ growth technique with a low temperature below 500 °C. We achieve excellent uniformities of Si1-x Gex thickness and resistivity across the entire 300 mm wafer and obtain an ultra-low as-deposited specific contact resistivity (ρc) down to 2.9 ± 2.8 × 10-10 Ω-cm2 on the sample with a high average active doping concentration (NA) of 2.80 × 1021cm-3 and Ge composition of 65%. We further detail the progression of the selective growth of such Si1 · x Gex film on advanced 3D structures. Using metal Si 1-x Gex ladder TLM (LTLM) structures, we investigate the contact properties from room temperature to cryogenic temperatures as low as 5 K, disclosing for the first time the insignificant change of ρc at such ultra-low ρc regimes.

KW - In-situ doping

KW - SiGe

KW - cryo-temperature

KW - specific contact resistivity

UR - http://www.scopus.com/inward/record.url?scp=85167608596&partnerID=8YFLogxK

U2 - 10.23919/VLSITechnologyandCir57934.2023.10185320

DO - 10.23919/VLSITechnologyandCir57934.2023.10185320

M3 - Conference contribution

AN - SCOPUS:85167608596

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 11 June 2023 through 16 June 2023

ER -

Zheng G, Wang Y, Xu H, Khazaka R, Muehlenbein L, Luo S et al. Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10^-10Ω-cm²ρ_cfrom Cryogenic (5 K) to Room Temperature. In 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.23919/VLSITechnologyandCir57934.2023.10185320