@inproceedings{34c9bebe1e99419790ac425cfa39dc73,
title = "Reconfigurable Germanium Quantum-Dot Arrays for CMOS Integratable Quantum Electronic Devices",
abstract = "We report the first-of-kind scalability and tunability of Ge QDs that are controllably sized, closely coupled, and self-aligned with control gates, using a combination of lithographic patterning, spacer technology, and self-assembled growth. The core experimental design is based on the thermal oxidation of poly-SiGe spacer islands designated at each included-angle location of designed Si3N4/c-Si ridge structures. Multiple Ge QDs with good size tunability of 7-20 nm were controllably achieved by adjusting the process times for deposition, etch back and thermal oxidation of poly-SiGe spacer islands. Our Ge QDs array provides a common platform for engineering diverse QD electronic devices with desired reconfigurability and optimizing their performance.",
keywords = "Germanium, Quantum dots, Reconfigurability, SETs",
author = "Wang, {I. Hsiang} and Ting Tsai and Pan, {Rong Cun} and Hong, {Po Yu} and Kuo, {M. T.} and Chen, {I. H.} and Thomas George and Lin, {H. C.} and Pei-Wen Li",
note = "Publisher Copyright: {\textcopyright} 2021 JSAP; 41st Symposium on VLSI Technology, VLSI Technology 2021 ; Conference date: 13-06-2021 Through 19-06-2021",
year = "2021",
month = jun,
day = "13",
doi = "10.23919/VLSICircuits52068.2021.9492360",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 Symposium on VLSI Technology, VLSI Technology 2021",
address = "美國",
}