Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys

Yan Cheng Lin; Ming Jui Tasi; Wu-Ching Chou; Wen-Hao Chang; Wei-Kuo Chen; Tooru Tanaka; Qixin Guo; Mitsuhiro Nishio

doi:10.1063/1.4858968

Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys

Yan Cheng Lin^*, Ming Jui Tasi, Wu-Ching Chou, Wen-Hao Chang, Wei-Kuo Chen, Tooru Tanaka, Qixin Guo, Mitsuhiro Nishio

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E_- conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E ₊ and the E_- conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration.

Original language	English
Article number	261905
Pages (from-to)	1-4
Number of pages	4
Journal	Applied Physics Letters
Volume	103
Issue number	26
DOIs	https://doi.org/10.1063/1.4858968
State	Published - 23 Dec 2013

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title = "Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys",

abstract = "This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E- conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E + and the E- conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration.",

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AU - Lin, Yan Cheng

AU - Tasi, Ming Jui

AU - Chou, Wu-Ching

AU - Chang, Wen-Hao

AU - Chen, Wei-Kuo

AU - Tanaka, Tooru

AU - Guo, Qixin

AU - Nishio, Mitsuhiro

PY - 2013/12/23

Y1 - 2013/12/23

N2 - This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E- conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E + and the E- conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration.

AB - This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E- conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E + and the E- conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration.

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SP - 1

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

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ER -

Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys

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