Abstract
This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E- conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E + and the E- conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration.
Original language | English |
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Article number | 261905 |
Pages (from-to) | 1-4 |
Number of pages | 4 |
Journal | Applied Physics Letters |
Volume | 103 |
Issue number | 26 |
DOIs | |
State | Published - 23 Dec 2013 |