@inproceedings{239a0a302b494c3e9b2bafb773e25bab,
title = "Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure",
abstract = "In this work, a recess-free thin AlGaN barrier metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with high threshold voltage of 3.19V, high maximum drain current of 716 mA/mm and high breakdown voltage of 906V is demonstrated for the first time. Three different thin barrier structures were compared for device performance. In addition, long-term reliability measurements were carried out to investigate the interface quality of the devices with and without gate recess. The recess-free device exhibits a smaller Vth hysteresis and a more stable performance than those of gate recessed devices. Overall, the recess-free thin barrier AlGaN/GaN MIS-HEMT demonstrates promising performance for power switching applications.",
keywords = "AlGaN, HEMT, normally-off, recess-free, thin barrier",
author = "Han, {Ping Cheng} and Yan, {Zong Zheng} and Wu, {Chia Hsun} and Chang, {Edward Yi} and Ho, {Yu Hsuan}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019 ; Conference date: 19-05-2019 Through 23-05-2019",
year = "2019",
month = may,
doi = "10.1109/ISPSD.2019.8757675",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "427--430",
booktitle = "2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019",
address = "美國",
}