Recent trends in indium nitride nanomaterials

Abhijit Ganguly, Li Chyong Chen, Kuei Hsien Chen, Surojit Chattopadhyay

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

1 Scopus citations


The group III nitrides including gallium nitride, aluminum nitride, and indium nitride (InN) represents a formidable group of semiconductors with a high impact in optoelectronics. This is primarily due to their direct bandgaps that span a wide spectral range with the added flexibility of combining these materials in the ternary form. The momentum for research in nanostructured InN is growing. These materials often serve as semiconductor sensor backbones also. InN, lately, has been at the centre of attraction because of its controversial bandgap and the challenges involved in synthesis and understanding the complexities of the material. This review attempts to present the recent developments in the growth and properties exhibited by the low dimensional InN materials.

Original languageEnglish
Title of host publicationIII- Nitride Devices and Nanoengineering
PublisherImperial College Press
Number of pages32
ISBN (Electronic)9781848162242
ISBN (Print)9781848162235
StatePublished - 1 Jan 2008


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