Recent progress on GaN-based vertical cavity surface emitting lasers

Tien-Chang Lu*, C. C. Kao, G. S. Huang, Hao-Chung Kuo, S. C. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report the recent progress of GaN-based VCSELs with two different laser structures. One is a hybrid cavity structure comprised an epitaxial AlN/GaN DBR, an InGaN/GaN MQW active region and a top dielectric DBR. Another is a dielectric cavity structure comprised an InGaN/GaN MQW layer sandwiched by two dielectric DBRs. Both lasers achieved laser action under optical pumping at the room temperature with narrow linewidth. The detailed characteristics of VCSELs will be reported. The status of the electrically pumped VCSEL will also be presented.

Original languageEnglish
Title of host publicationOptoelectronic Devices
Subtitle of host publicationPhysics, Fabrication, and Application IV
Pages1-12
Number of pages12
DOIs
StatePublished - 9 Sep 2007
EventOptoelectronic Devices: Physics, Fabrication, and Application IV - Boston, MA, United States
Duration: 11 Sep 200711 Sep 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6766
ISSN (Print)0277-786X

Conference

ConferenceOptoelectronic Devices: Physics, Fabrication, and Application IV
Country/TerritoryUnited States
CityBoston, MA
Period11/09/0711/09/07

Keywords

  • DBRs
  • GaN
  • VCSELs

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