Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures

Juhn-Jong Lin; J. P. Bird

doi:10.1088/0953-8984/14/18/201

Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures

Juhn-Jong Lin^*, J. P. Bird

^*Corresponding author for this work

Institute of Physics

Research output: Contribution to journal › Review article › peer-review

383 Scopus citations

Abstract

The results of the experimental study of the low-temperature electron dephasing time (τ_φ) in metals and semiconductor mesoscopic structures were presented. The experiment was performed to determine the value of τ_φ in systems of different dimentionality and with different levels of disorder. Results showed that the dephasing in metal films is mainly due to electron-phonon (e-ph) scattering and electron-electron scattering is the main cause of dephasing in semiconductor quantum wires.

Original language	English
Pages (from-to)	R501-R596
Number of pages	96
Journal	Journal of Physics Condensed Matter
Volume	14
Issue number	18
DOIs	https://doi.org/10.1088/0953-8984/14/18/201
State	Published - 13 May 2002

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title = "Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures",

abstract = "The results of the experimental study of the low-temperature electron dephasing time (τφ) in metals and semiconductor mesoscopic structures were presented. The experiment was performed to determine the value of τφ in systems of different dimentionality and with different levels of disorder. Results showed that the dephasing in metal films is mainly due to electron-phonon (e-ph) scattering and electron-electron scattering is the main cause of dephasing in semiconductor quantum wires.",

author = "Juhn-Jong Lin and Bird, {J. P.}",

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AU - Lin, Juhn-Jong

AU - Bird, J. P.

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N2 - The results of the experimental study of the low-temperature electron dephasing time (τφ) in metals and semiconductor mesoscopic structures were presented. The experiment was performed to determine the value of τφ in systems of different dimentionality and with different levels of disorder. Results showed that the dephasing in metal films is mainly due to electron-phonon (e-ph) scattering and electron-electron scattering is the main cause of dephasing in semiconductor quantum wires.

AB - The results of the experimental study of the low-temperature electron dephasing time (τφ) in metals and semiconductor mesoscopic structures were presented. The experiment was performed to determine the value of τφ in systems of different dimentionality and with different levels of disorder. Results showed that the dephasing in metal films is mainly due to electron-phonon (e-ph) scattering and electron-electron scattering is the main cause of dephasing in semiconductor quantum wires.

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DO - 10.1088/0953-8984/14/18/201

M3 - Review article

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Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures

Abstract

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